碲镉汞p型接触孔湿法腐蚀工艺研究  

Study on wet etching process of the HgCdTe p-type contact hole

作　　者：陈慧卿[1] 白雪飞[1] 宁提[1] 胡尚正[1] CHEN Hui-qing;BAI Xue-fei;NING Ti;HU Shang-zheng(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2019年第1期82-85,共4页Laser & Infrared

摘　　要：针对碲镉汞芯片p型接触孔湿法腐蚀工艺进行研究,采用不同条件的湿法腐蚀工艺完成碲镉汞p型接触孔制备,通过扫描电子显微镜和激光扫描显微镜分析腐蚀后的接触孔表面形貌,电学接触性能通过伏安特性曲线表征。实验结果表明,传统湿法腐蚀工艺在碲镉汞芯片接触孔制备过程中存在钻蚀严重和均匀性不好等问题,针对以上问题提出了一种超声辅助湿法腐蚀工艺,制备出形貌及均匀性较好的p型接触孔。Wet corrosion process of p-type contact hole of HgCdTe chip was studied,and the p-type contact holes of HgCdTe were prepared by wet etching under different conditions.The surface morphology of the holes was analyzed by scanning electron microscope(SEM),laser scanning microscope(LSM),and the electrical performance of the sample was characterized by the current-voltage curve characteristic.The experimental results show that the conventional wet etching process has some problems such as serious drilling erosion and poor uniformity.So,in the paper,an ultrasonic assisted wet corrosion process was proposed to prepare p-type contact holes with good morphology and uniformity.

关 键 词：碲镉汞 湿法腐蚀 p型接触孔 

分 类 号：TN213[电子电信—物理电子学]