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作 者:刘伟达[1,2] 陈蕊 王丽丽[1] 李宏广[1] 安涛 张东辉[2] 徐士翀 LIU Weida;CHEN Rui;WANG Lili;LI Hongguang;AN Tao;ZHANG Donghui;XU Shichong(College of Science,Changchun University,Changchun 130022,China;Nuclear Industrial Engineering Research Design Co.Ltd,Beijing 101300,China;Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education,Jilin Normal University,Changchun 130103,China)
机构地区:[1]长春大学理学院,长春130022 [2]核工业工程研究设计有限公司,北京101300 [3]吉林师范大学功能材料物理与化学教育部重点实验室,长春130103
出 处:《吉林大学学报(理学版)》2019年第1期156-159,共4页Journal of Jilin University:Science Edition
基 金:国家自然科学基金(批准号:51302019);吉林省科技厅优秀青年基金(批准号:20180520222JH);吉林省产业技术研究与开发项目(批准号:2018C043-3;2017C052-3);吉林省教育厅"十三五"科学技术研究项目(批准号:JJKH20191195KJ)
摘 要:采用直流磁控溅射方法,保持氩气流量不变,控制氮气的体积分数为10%,12.5%,15%,分别用Si(100)单晶和SrTiO_3(100)单晶基片制备Fe-N薄膜.用X射线衍射(XRD)和振动样品磁强计(VSM)等方法对两种不同基片生长Fe-N薄膜的结构及磁学性能进行表征.结果表明:在SrTiO_3(100)单晶基片上得到了单相γ′-Fe_4N薄膜,与Si(100)基片上的样品相比,SrTiO_3(100)更有利于诱导γ′-Fe_4N薄膜的取向性生长;当氮气的体积分数约为12.5%时,制备单相γ′-Fe_4N薄膜的晶粒结晶度较好,且饱和磁化强度较高,矫顽力比Si(100)为基片获得的Fe-N薄膜样品低,软磁性能较好.The Fe-N thin films were prepared on Si(100)and SrTiO3(100)single crystal substrates by DC magnetron sputtering,keeping the flow rate of argon unchanged,and controlling the volume fractions of nitrogen at 10%,12.5% and 15%,respectively.The structure and magnetic properties of Fe-N thin films grown on the different substrates were characterized by using X-ray diffraction(XRD)and vibrating sample magnetometer(VSM)respectively.The results show that the single-phase γ′-Fe4N thin films are obtained on the SrTiO3(100)single crystal substrate.Oriented growth of the γ′-Fe4N films induced on SrTiO3(100)substrate is easier than Si(100)substrate.When the volume fraction of nitrogen is about 12.5%,the crystallinity is better and the saturation magnetization is higher of the single-phase γ′-Fe4N thin films,the coercivity is lower than that of the Fe-N thin films obtained on Si(100)substrate,and the soft magnetic properties are better.
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