β-Ga_2O_3体单晶X射线光电子能谱分析  

X-Ray Photoelectron Spectroscopy Analysis of β-Ga_2O_3 Bulk Single Crystal

作　　者：程红娟[1] 张胜男 练小正[1] 金雷[1] 徐永宽[1] CHENG Hong-juan;ZHANG Sheng-nan;LIAN Xiao-zheng;JIN Lei;XU Yong-kuan(The 46th Research Institute, China Electronics Technology Group Corporation, Tianjin 300220, China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《人工晶体学报》2019年第1期8-12,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51702297)

摘　　要：通过对导模法制备的非故意掺杂、Si掺杂β-Ga_2O_3晶体和Si掺杂后退火处理的β-Ga_2O_3晶体进行了X射线光电子能谱分析(XPS),对比分析不同样品的Ga3d、Ga2p、O1s特征峰位和峰强度变化,并结合文献报道中β-Ga_2O_3薄膜及单晶材料的报道结果,进一步确认β-Ga_2O_3体单晶特征峰峰值。同时,通过对各峰强度的变化进行对比分析,对次峰产生的原因进行推测,获得Si掺杂及退火对晶体表面及晶体内部个特征峰的变化规律。β-Ga 2O 3 single crystals were grown by edge defined film-fied growth method in this paper.X-ray photoelectron spectroscopy(XPS)analysis was performed on unintentionally doped,Si-doped and annealed Si-dopedβ-Ga 2O 3 bulk single crystal.And the intensity changes of the characteristic peaks of Ga3d,Ga2p and O1s of different samples were compared and analyzed.Combined with the reports ofβ-Ga 2O 3 thin film and single crystal materials,the characteristic peaks ofβ-Ga 2O 3 bulk single crystals were confirmed further and causes of the secondary peaks were analyze to obtain the regulation of Si doping and annealing on properties of the crystal surface and its internal.

关 键 词：β-Ga2O3晶体 导模法 X射线光电子能谱分析 特征峰 

分 类 号：O482[理学—固体物理]