碲镉汞红外焦平面响应图“交叉线”特征起源探讨  

Crosshatch Pattern on HgCdTe FPA Response Imaging

作　　者：孔金丞[1] 覃钢[1] 秦强[1] 李立华[1] 毛京湘[1] KONG Jincheng;QIN Gang;QIN Qiang;LI Lihua;MAO Jingxiang(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2019年第2期101-106,共6页Infrared Technology

摘　　要：对碲镉汞红外焦平面热响应图"交叉线"特征起源进行了研究。基于碲镉汞的闪锌矿结构晶体滑移系统理论,讨论了不同滑移面与碲镉汞薄膜生长所用(111)B面和(211)B面交线的方向,从晶格失配和应力释放的角度探讨了碲镉汞薄膜表面交叉线形貌与X射线衍射交叉线貌相的起源与几何结构,分析了碲镉汞薄膜交叉线与材料晶体质量之间的关系,探讨了碲镉汞红外焦平面热响应图交叉线特征的起源及其与器件性能的关系。In this paper,we reviewed the crosshatch patterns commonly found on HgCdTe infrared FPA(focal plane array)response imaging,which were associated with the intersection between the(111)growth plane and each of the eight equivalent HgCdTe slip planes.Crosshatch patterns can also be observed using Nomarski micrograph and X-ray diffraction morphologies on a HgCdTe film surface.The schematic representation of the geometric relationship between crosshatch lines and the different directions of the CdZnTe substrate were demonstrated.The relationship between the crosshatch pattern morphology and crystallinity of HgCdTe films as well as the device performance were discussed.

关 键 词：碲镉汞 晶格失配 滑移系统 残余应变 交叉线 

分 类 号：TN215[电子电信—物理电子学] TN304