硅烷流量对热丝法制备富硅氮化硅薄膜的影响  

Effect of Silane Flow Rate on the Preparation of Silicon-rich Silicon Nitride Film by Hot Wire Method

作　　者：闫泽飞 周炳卿[1,2] 李婷婷 YAN Ze-fei;ZHOU Bing-qing;LI Ting-ting(College of Physics and Electron Information , Inner Mongolia Normal University,Hohhot 010022 , China;Key Lab of Physics and Chemistry frr Functional Material Hohhct 010022 , China)

机构地区：[1]内蒙古师范大学物理与电子信息学院,内蒙古呼和浩特010022 [2]功能材料物理与化学自治区重点实验室,内蒙古呼和浩特010022

出　　处：《内蒙古工业大学学报（自然科学版）》2018年第5期368-373,共6页Journal of Inner Mongolia University of Technology：Natural Science Edition

基　　金：国家自然科学基金资助项目(51262022)

摘　　要：以热丝化学气相沉积为方法,硅烷流量为变量,制备一系列氮化硅薄膜,并对样品进行傅里叶红外光谱、紫外-可见光谱、PL光谱的测试,结果发现:随着硅烷流量的增加Si-N键键合几率相对减小,Si-Si键键合几率相对增加,薄膜折射率局域增大且带隙值在富硅范围内呈减小趋势.在光致发光谱中也观察到有硅量子点发光波长范围内峰位明显移动的波峰,由测试可知,所得样品为向富硅相转变或已呈富硅相的氮化硅薄膜.A series of silicon nitride films were prepared by hot gas chemical vapor deposition method with silane flow as a variable. The samples were tested by Fourier transform infrared spectroscopy, ultraviolet-visible spectroscopy and PL spectroscopy. The results show that with the increase of silane flow,the Si-N bond bonding probability relatively decreased. The Si-Si bond bonding probability relatively increased. The refractive index of the film increased locally, and the band gap value decreased in the silicon-rich range. In the photoluminescence spectrum,peak with a significant shift in the peak position in the wavelength range of the silicon quantum dot was also seen. Therefore,it is speculated that the sample obtained is a silicon nitride film which is converted to a silicon-rich phase or has a silicon-rich phase.

关 键 词：热丝化学气相沉积 富硅氮化硅薄膜 硅烷流量 化学键结构 

分 类 号：TK514[动力工程及工程热物理—热能工程]