先驱体流延转化法制备碳化硅陶瓷基片  

Preparation of Silicon Carbide Ceramic Substrateby Precursor Infiltration Pyrolysis

作　　者：鞠振飞 雷雷 JU Zhenfei;LEI Lei(Shanghai Bureau of Naval Equipment Department, Shanghai 201206, China;AECC Aero Engine Control System Institute, Wuxi 214100, China)

机构地区：[1]海装上海局,上海201206 [2]中国航发控制系统研究所,江苏无锡214100

出　　处：《电子工艺技术》2019年第1期5-7,24,共4页Electronics Process Technology

摘　　要：为了改善碳化硅陶瓷基片的介电性能,开发不同于浆料烧结法的陶瓷基片制备新工艺。采用先驱体转化法,通过向先驱体中添加铍作为异质元素,再进行流延和烧成,制备出了含有铍元素的改性碳化硅陶瓷基片。对含铍碳化硅陶瓷基片的介电常数和介电损耗进行了表征,发现虽然其介电常数和介电损耗相比常用的Al2O3等陶瓷基片材料没有明显提升,但铍元素含量对介电常数和介电损耗曲线的峰值区频率有明显的影响,可通过调节碳化硅陶瓷中铍元素的含量制得在特定频率范围下具有低介电常数和低介电损耗的改性碳化硅陶瓷基片。A new process for preparing ceramic substrates is developed in order to improve the dielectric properties of silicon carbide ceramic substrates, which is different from paste sintering method. Modifi ed silicon carbide ceramic substrates containing beryllium were prepared by adding beryllium as heterogeneous element to the precursor, tape casting and sintering. The dielectric constant and dielectric loss are characterized, the dielectric constant and dielectric loss of the substrates were not signifi cantly increased compared with those of Al2O3 and other ceramic substrates, the content of beryllium had a signifi cant effect on the frequency in peak area of dielectric constant and dielectric loss curve. It is possible to prepare modified SiC substrate which has low dielectric constant and dielectric loss under special frequency by adjusting the content of beryllium.

关 键 词：先驱体转化法 陶瓷基片 异质元素 

分 类 号：TN453[电子电信—微电子学与固体电子学]