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作 者:程雨 曹凌霞[1] 肖钰[1] CHENG Yu;CAO Ling-xia;XIAO Yu(North China Institute of Photoelectric Technology,Beijing 100015,China)
出 处:《红外》2019年第2期7-13,共7页Infrared
摘 要:InSb红外焦平面探测器一直在中波波段占据重要地位。随着科技的发展,迫切需要针对InSb单晶的精密加工方法。采用单点金刚石切削(Single Point Diamond Turning,SPDT)精密机床对InSb晶体进行减薄工艺开发。在机床加工工艺中,可变参数有主轴转速、单次去除量和进给速度等。通过正交试验,确定了单点金刚石切削InSb晶体的最佳工艺参数。对于切削后的InSb晶体,结合双晶衍射测试,其切削损伤低于3■m。InSb红外器件流片证实单点金刚石切削InSb晶体工艺能满足用户的使用要求,获得较好的结果。InSb Infrared Focal Plane Array(IRFPA)detectors have always occupied an important place in the medium infrared waveband.With the development of science and technology,it is urgent to find out a precision machining method for InSb single crystals.A precise Single Point Diamond Turning(SPDT)machine is used to make InSb crystal be thin.There are several variable parameters,such as spindle speed,cutting depth and feed rate etc,for SPDT machines.Through an orthogonal experiment,the optimal working parameters for single point diamond turning of InSb crystals are determined.By combining with the double crystal diffraction measurement,it is found that the damaged depth of cutted InSb crystals is less than 3 μm.This InSb device processing experiment shows that the SPDT technology meets users'requirements and achieves good results.
分 类 号:TN362[电子电信—物理电子学]
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