共晶焊倒装高压LED的制备及性能分析  

Fabrication and Characterization of Eutectic HV Flip-chip High Voltage LEDs

作　　者：尹越 田婷[1,2,3] 刘志强 王江华[4] 伊晓燕 梁萌 闫建昌[1,2,3] 王军喜 李晋闽[1,2,3] YIN Yue;TIAN Ting;LIU Zhiqiang;WANG Jianghua;YI Xiaoyan;LIANG Meng;YAN Jianchang;WANG Junxi;LI Jinmin(Research and Development Center for Solid State Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application,Beijing 100083,China;Hebi City Industrial Co.,Ltd,Hebi 458000,China)

机构地区：[1]中国科学院半导体研究所照明研发中心,北京100083 [2]中国科学院大学,北京100049 [3]北京第三代半导体材料与应用工程技术研究中心,北京100083 [4]鹤壁市大华实业有限公司,河南鹤壁458000

出　　处：《照明工程学报》2019年第1期26-31,共6页China Illuminating Engineering Journal

基　　金：国家重点研发计划(批准号:2017YFB0403300;2017YFB0403302);北京市科委计划(批准号:Z161100002116032);广州市科技计划项目(批准号:201704030106;201604030035)

摘　　要：使用共晶焊替代倒装焊,制备了由10颗LED微晶粒串联而成的共晶焊倒装高压LED。随后通过芯片外观对比及相关光电性能测试证实,共晶焊倒装高压LED在1 W电注入下光功率相比倒装焊高压LED可提升10. 5%,并且光效下降现象得到缓解。同时,ANSYS热模拟结果表明:共晶焊倒装结构芯片具有更好的散热特性,适合于大电流驱动。The eutectic HV FCLEDs consisting of 10 micro-LEDs in series were fabricated. Confirmed by chip appearance comparison and related photoelectric performance test, under the input power of 1 W, the efficiency droop was alleviated, and the light output power (LOP) of eutectic HV FCLEDs was enhanced by 10.5% compared with traditional HV FCLEDs. Meanwhile, the results of ANSYS thermal simulation indicates that the eutectic HV FCLEDs due to face-to-face contact has better heat dissipation characteristics than traditional HV FCLEDs. The eutectic HV FCLEDs are very suitable for the driving of high current density.

关 键 词：共晶焊 LED 高压 倒装结构 性能表征 

分 类 号：TM923[电气工程—电力电子与电力传动]