光化学溶胶-凝胶制备PLZT铁电薄膜及其光电特性  

Fabrication and Photovoltaic Property of PLZT Ferroelectric Thin Film by Photochemical Sol-gel Method

作　　者：李祯[1] 杨得草 李尔波 岳建设[1] LI Zhen;YANG De-cao;LI Er-bo;YUE Jian-she(College of Chemistry and Chemical Engineering,Xianyang Normal University,Xianyang 712000,China)

机构地区：[1]咸阳师范学院化学与化工学院,咸阳712000

出　　处：《人工晶体学报》2019年第2期321-325,共5页Journal of Synthetic Crystals

基　　金：陕西省大学生创新创业训练计划项目(201828052)

摘　　要：为了降低PLZT铁电薄膜的结晶温度,使用溶胶-凝胶法配合紫外光辐照的光化学工艺,在单晶硅基板上低温制备了PLZT铁电薄膜。经过紫外辐照过的凝胶膜可以在400℃促使PLZT获得良好的铁电性能,剩余极化强度为12. 3μC/cm^2。紫外辐照过的薄膜可以在低温下有效地分解金属醇盐,形成活性金属氧化物,保证材料低温结晶。辐照过程中产生的臭氧可以带走薄膜中的残炭,使得薄膜具有良好的铁电性能。低温制备的PLZT铁电薄膜获得了稳定的光电流和较好的光电转化效率。Sol-gel method assisted with UV irradiation process was employed to decrease the crystallization temperature of PLZT ferroelectric films which deposited on Si wafer. The PLZT crystalline can be obtained as low as 400 ℃, and obtained good ferroelectric property with the remanent polarizaiton of 12.3 μC/cm 2. The metal alkoxides can be decomposed completely under the UV irradiated and forms metal oxides with high activity, therefore, low temperature crystalline can be realized. The ozone produced during the irradiation can get rid of the residual carbon, ensure good ferroelectric property of PLZT. The photo-current is stable and high photoelectricity conversion rate is obtained.

关 键 词：PLZT 铁电薄膜 溶胶-凝胶法 光电特性 

分 类 号：O484[理学—固体物理]