基于CMOS晶体管的太赫兹探测器研究进展  

Research development of the terahertz detector based on the CMOS transistor

作　　者：付元旭 梁志茂[1] 范菁[1] 张广求 赵波[1] FU Yuan-xu;LIANG Zhi-mao;FAN Jin;ZHANG Guang-qin;ZHAO Bo(School of Electrical and Information Technology,Yunnan Minzu University,Kunming 650500,China)

机构地区：[1]云南民族大学电气信息工程学院,云南昆明650050

出　　处：《云南民族大学学报（自然科学版）》2019年第2期203-208,共6页Journal of Yunnan Minzu University:Natural Sciences Edition

基　　金：国家自然科学基金(6154063);云南省应用基础研究计划项目(2018FDO55)

摘　　要：随着太赫兹波的广泛应用,太赫兹探测技术成为研究的热点,探测器件主要以肖特基二极管,量子阱二极管,CMOS晶体管为主,CMOS晶体管探测器件具有响应度高,信噪比好,等效功率高等优点.首先介绍了太赫兹探测器的技术指标,接着从结构及材料两方面对近年来CMOS晶体管的改进方案进行了综述对比,最后介绍了太赫兹探测器的应用并对应用前景及未来发展方向进行了展望.With the wide application of terahertz wave,terahertz detection technology has become the focus of attention. Terahertz detectors are mainly composed of Schottky diodes,quantum-well diodes and the CMOS transistor. The CMOS transistor has good responsivity,good signal to the noise ratio and high equivalent power. First,this paper introduces the terahertz detector and its technical index. Second,it gives an overall review of the improvement of the CMOS transistor in its structure and materials in recent years. Third,it discusses the application of the CMOS transistor and predicts its future development.

关 键 词：太赫兹探测器 CMOS晶体管 器件响应度 等效噪声功率 

分 类 号：TN31[电子电信—物理电子学]