GaMnAs/AlAs/GaMnAs构成隧道结的隧道磁致电阻效应  

Study on Magnetoresistance Effect of in GaMnAs/AlAs/GaMnAs Tunnel Junctions

作　　者：鲁明亮 马丽娟 陶永春[2] LU Ming-liang;MA Li-juan;TAO Yong-chun(Nanjing Technical Vocational College,Nanjing Jiangsu 210019,China;School of Physics and Technology,Nanjing Normal University,Nanjing Jiangsu 210023,China)

机构地区：[1]南京高等职业技术学校,江苏南京210019 [2]南京师范大学物理科学与技术学院,江苏南京210023

出　　处：《淮阴师范学院学报（自然科学版）》2019年第1期19-23,40,共6页Journal of Huaiyin Teachers College;Natural Science Edition

基　　金：国家自然科学基金资助项目(10947005)

摘　　要：铁磁半导体构成隧道结的研究是凝聚态领域中一个重要的研究方向.k·p模型在处理半导体异质结空穴传输问题时非常有效,利用k·p模型研究GaMnAs/AlAs/GaMnAs隧道结的磁致电阻效应,通过将k·p微扰与多能带量子传输边界相结合的新方法,给出自旋量子轴的转换矩阵.计算了各种空穴的透射系数随能量的变化以及隧道结的磁致电阻,讨论了隧道磁致电阻对自旋量子轴方向的依赖关系,并对计算结果进行了理论分析.Ferromagnetic semiconductor gradually becomes one of the most attractive subjects of condensed state field.In this paper,the k·p model is very effective in the hole transport problem of semiconductor heterojunction.The transformation matrix of a self rotating quantum axis is given by utilizing the new method combining the k·p model with the multiband quantum transmission boundary.The variation of the transmission coefficient with energy and the magnetoresistance of the tunnel junction are calculated.The dependence of the tunneling magnetoresistance on the direction of the spin quantum axis is discussed,and the calculation results are theoretically analyzed.

关 键 词：铁磁性半导体 隧道结 TMR 

分 类 号：O469[理学—凝聚态物理]