靶基距对ZnMgO:Ti透明导电薄膜性能的影响  

Effect of target-substrate distance on properties of ZnMgO:Ti transparent conductive film

作　　者：孙艳 倪庆宝 张化福 刘云燕 刘汉法 SUN Yan;NI Qingbao;ZHANG Huafu;LIU Yunyan;LIU Hanfa(School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255049, China)

机构地区：[1]山东理工大学物理与光电工程学院,山东淄博255049

出　　处：《山东理工大学学报（自然科学版）》2019年第3期43-46,共4页Journal of Shandong University of Technology:Natural Science Edition

基　　金：山东省自然科学基金项目(ZR2014EL002)

摘　　要：采用直流磁控溅射法在玻璃衬底上制备了ZnMgO∶Ti透明导电薄膜。利用SEM、XRD、双光束紫外可见分光光度计和四探针法系统研究了靶基距对薄膜形貌及光电性能的影响。结果表明,靶基距对Zn MgO∶Ti薄膜光电特性有较大影响。随着靶基距的增加,电阻率先减小后增加,在靶基距为50 mm时薄膜电阻率达到最小值6.44×10-4Ω·cm;靶基距对薄膜的光透过率影响不大,所制备薄膜在400～900 nm范围内的平均透射率均达到92%,但随着靶基距的增加,光学吸收边界向短波方向移动,出现了蓝移现象。不同靶基距下,带隙宽度也发生了变化。ZnMgO∶ Ti transparent conductive film was successfully prepared on the substrate by magnetron sputtering method. The structure and photoelectric properties were investigated using SEM, XRD, double-beam UV-spectrophotometer and four probe methods. The results showed that the target-substrate distance had great influence on the photoelectric properties of ZnMgO∶ Ti transparent conductive film. With the increase of target-substrate distance, the resistivity of films first increases and then decreases. It reached a minimum of 6.44×10^-4 Ω·cm when the target distance was 50 mm. Target-substrate distance had little influence on transmittance,and the average transmittance was more than 92%. In addition, it appeared the blue shift phenomenon with increasing target-subtrate distance. Thin film forbidden band width changed under different target-substrate distances.

关 键 词：ZNMGO 透明导电薄膜 磁控溅射 靶基距 光电性能 

分 类 号：O484.1[理学—固体物理]