基于GaN HEMTs的S波段大功率固态功放组件设计  

Design of S-band Solid-State Power Module with High Output Power Based on GaN HEMTs

作　　者：彭恩超 张瑞 PENG En-chao;ZHANG Rui(No.38 Research Institute of CETC,Hefei 230088,China;Anhui Antenna and Microwave Engineering Laboratory,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第三十八研究所,合肥230088 [2]安徽省天线与微波工程实验室,合肥230088

出　　处：《中国电子科学研究院学报》2019年第2期206-211,共6页Journal of China Academy of Electronics and Information Technology

摘　　要：介绍了一种基于氮化镓高电子迁移率晶体管(GaN HEMTs)的S波段大功率固态功放组件,详细阐述了组件的微波链路设计、热设计、BITE设计以及电源设计等设计中的关键性问题。测试结果表明,组件在450μs脉宽、15%占空比条件下输出峰值功率不小于1. 6 k W,效率达到40%。组件创新性地采用实时参数化的数字采样技术、激励/控制输入通道的冗余设计技术,适应高可靠雷达系统的健康管理对组件的智能化要求。A kind of S-band solid-state power module is introduced with high output power based on GaN HEMTs.The design of the module is described in detail in terms of the key problems such as the design of microwave chain,heat dissipation,BITE function,power supply,and so on.Measurement results show that the power module delivers more than 1.6 kW peak power and a typical 40%PAE with 450μs pulse width and 15%duty cycle.The module innovatively utilizes real-time digital sampling technology and redundancy design of excitation/control input channel,which makes it intelligent and proper for the application in the reliable radar systems.

关 键 词：功放组件 氮化镓 高电子迁移率晶体管 S波段 雷达 大功率 

分 类 号：TN602[电子电信—电路与系统]