强反型区下纳米MOSFET的射频噪声机理分析  

Analysis of RF noise mechanism in strong inversion region nanoscale MOSFET

作　　者：曾洪波 彭小梅 王军[1] Zeng Hongbo;Peng Xiaomei;Wang Jun(School of Information Engineering,Southwest University of Science and Technology,Mianyang 621010,China)

机构地区：[1]西南科技大学信息工程学院,四川绵阳621010

出　　处：《强激光与粒子束》2019年第3期31-35,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(699010003);四川省教育厅资助科研项目(18ZA0502)

摘　　要：为了有效地表征纳米MOSFET强反型区下的射频噪声特性,研究了其噪声建模的方法。在分析45nm MOSFET射频小信号等效电路参数提取结果的基础上,建立了该器件漏极电流噪声的简洁模型。该模型完整地表征了决定45nm器件噪声机理的三个组成部分:本征漏极电流噪声、栅极管脚寄生电阻热噪声和栅漏衬底寄生电磁耦合噪声。噪声测量在验证所建模型准确性和精度的同时,还表明:45nm MOSFET的本征漏极电流噪声为受抑制的散粒噪声,并且随着栅源偏压的降低受抑制性逐渐减弱直至消失。In order to effectively characterize the RF noise characteristics in the strong inversion region of nanoscale MOSFET, the noise modeling method is studied.Based on the analysis of extracted results of radio frequency small-signal equivalent circuit parameters of 45 nm MOSFET,a compact model for the MOSFET’s drain current noise is proposed.This model fully describes three kinds of main physical sources that determine the noise mechanism of 45 nm MOSFET,including intrinsic drain current noise,thermal noise induced by the gate parasitic resistance,and coupling thermal noise induced by substrate parasitic effect.The accuracy of the proposed model is verified by noise measurements,and the intrinsic drain current noise of 45 nm MOSFET is proved to be the suppressed shot noise,and with the decrease of the gate voltage,the suppressed degree gradually decreases until it vanishes.

关 键 词：纳米MOSFET 受抑制散粒噪声 射频 噪声建模 强反型区 漏极电流噪声 

分 类 号：TN386.1[电子电信—物理电子学]