基于宽禁带氧化物半导体的紫外测试仪研制  

Research on Ultraviolet Detector Based on Wide Band Gap Oxide Semiconductor

作　　者：尹博 李昕[1] 解天骄[1] 郑连陞 刘彩霞[1] YIN Bo;LI Xin;XIE Tianjiao;ZHENG Liansheng;LIU Caixia(College of Electronic Science and Engineering, Jilin University, Changchun 130012, China)

机构地区：[1]吉林大学电子科学与工程学院,长春130012

出　　处：《实验室研究与探索》2019年第3期61-63,105,共4页Research and Exploration In Laboratory

基　　金：国家自然科学基金(11574110);吉林省教育厅"十三五"科学技术项目(JJKH20180158KJ)

摘　　要：以溶胶凝胶法制备的宽禁带氧化物半导体为基底,磁控溅射法制备的Pt为插指电极材料,在Si衬底上依次制备氧化物半导体薄膜、插指Pt电极、外层氧化物半导体薄膜,形成夹层式MSM型紫外探测芯片,并连接至底座,得到紫外探测器件。该器件结构不但实现了对插指电极的保护封装,并且提高了探测芯片自身的稳定性。以该器件为核心进行了外围电路的设计,用功能模块进行光强度向电压信号的转换,并且将入射紫外光的强度通过显示屏显示出来。经封装,最终得到一款性能良好,功能完备的紫外测试仪。The sandwich type MSM structured UV detection chip was formed by oxide semiconductor film and interdigital Pt electrodes. Using a wide bandgap on a Si substrate, oxide semiconductor prepared by sol-gel method was used as the base, and Pt prepared by magnetron sputtering was used as interdigital electrodes, a UV device was produced at last. The structure realizes the protect of interdigital electrodes and improves the stability of the device itself. Taking the device as the core, the peripheral circuit was designed and the function module was used to realize the conversion of light intensity into voltage signal and display the light intensity on the screen. After being encapsulated, a high-performance and fully functional UV dosimeter was finally obtained.

关 键 词：紫外探测仪 夹层式设计 氧化物半导体 

分 类 号：TN23[电子电信—物理电子学]