High-performance asymmetric electrodes photodiode based on Sb/WSe2 heterostructure  

作　　者：Xiao Liu Guangzhuang Sun Peng Chen Junchi Liu Zhengwei Zhang Jia Li Huifang Ma Bei Zhao Ruixia Wu Weiqi Dang Xiangdong Yang Chen Dai Xuwan Tang Zhuojun Chen Lili Miao Xingqiang Liu Bo Li Yuan Liu Xidong Duan 

机构地区：[1]Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China [2]State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China

出　　处：《Nano Research》2019年第2期339-344,共6页纳米研究（英文版）

基　　金：the National Natural Science Foundation of China (Nos. 61804050 and 51872086);the Double First-Class Initiative of Hunan University (No. 531109100004);the Fundamental Research Funds of the Central Universities (Nos. 531107051078 and 531107051055).

摘　　要：Two-dimensional (2D) van der Waals (vdWs) metal-semiconductor heterostructures with atomically sharp interface and matched work functions have recently attracted great attention due to their unique electronic and optoelectronic properties. Here we report the vapor phase epitaxial growth of large-scale vertical Sb/WSe2 metal-semiconductor vdWs heterostructures with uniform stacking orientation. Compared with the growth on S1O2/S1 substrate, the thick ness of Sb nan osheet on WSe2 can be reduced effectively to mono layer. We con struct Sb-WSe2-Au asymmetric electrodes photodiode based on the Sb/WSe2 heterostructures. Electrical transport measurements indicate that the photodiode show obvious rectifying effect. Optoelectronic characterizations show prominent photoresponse with a high photoresposivity of 364 mA/W, a fast response time of less than 8 ms, a large open-circuit voltage of 0.27 V and a maximum electrical power output of 0.11 nW. The direct growth of high-quality metal-semiconductor vdWs heterostructures may open up new realms in 2D functional electronics and optoelectronics.

关 键 词：two-dimensional ASYMMETRIC electrode PHOTODIODE VAN der WAALS (vdWs) HETEROSTRUCTURE OPTOELECTRONICS 

分 类 号：O4[理学—物理]