柔性PZT外延薄膜制备及其电学性能研究  

Preparation and electrical properties of flexible PZT epitaxial thin films

作　　者：陈浩[1] 郑志强 祁亚军[1] 梁坤[1] 章天金[1] CHEN Hao;ZHENG Zhiqiang;QI Yajun;LIANG Kun;ZHANG Tianjin(School of Materials Science and Engineering,Hubei University,Wuhan 430062,China)

机构地区：[1]湖北大学材料科学与工程学院,湖北武汉430062

出　　处：《湖北大学学报（自然科学版）》2019年第3期277-281,共5页Journal of Hubei University：Natural Science

基　　金：国家自然科学基金(51472078);铁电压电材料与器件湖北省重点实验室开放课题基金(201706)资助

摘　　要：采用脉冲激光沉积技术在柔性云母衬底上制备高质量的Pb(Zr_(0. 52)Ti_(0. 48))O_3(PZT)外延薄膜.引入NiFe_2O_4作为外延生长种子层,实现PZT薄膜的(111)取向外延生长.电学性能测试显示其具有优异的铁电压电性能,在未弯曲时,剩余极化(2P_r)值和压电系数(d_(33))分别为55μC/cm^2和87 pm/V.柔性PZT存储单元在弯曲、变温等条件下的铁电保持、疲劳性能测试显示其具有可靠稳定的信息存储功能.该结果表明柔性PZT薄膜在可穿戴电子器件领域具有重要的应用前景.High-quality epitaxial Pb( Zr0. 52Ti0. 48)O3( PZT) thin films are obtained on mica substrate by pulse laser deposition. The PZT thin films are( 111) oriented epitaxial growth by introducing NiFe2O4 as a seeding layer. The electrical properties measurements show that the flexible PZT thin films possess excellent ferroelectric and piezoelectric properties. The remnant polarization(2 Pr) and the piezoelectric coefficient( d33) are measured to be 55 μC/cm^2 and 87 pm/V,respectively,when the flexible thin film is unbending.The flexible PZT thin films exhibit high stability under mechanical bending,high temperature as well as high ferroelectric fatigue resistance and good retention. This study demonstrates that the flexible PZT thin films can not only be used for nonvolatile memory application but also in wearable and implantable electronics.

关 键 词：柔性 PZT薄膜 电学性能 稳定性 

分 类 号：TB303[一般工业技术—材料科学与工程]