调制溅射功率对掺镓氧化锌薄膜光电性能影响  

Influence of Sputtering Power Modulation on the Photoelectric Properties of Ga-doped ZnO Thin Films

作　　者：张志秦 胡跃辉 张效华 胡克艳 陈义川 朱文均 帅伟强 劳子轩 ZHANG Zhiqing;HU Yuehui;ZHANG Xiaohua;HU Keyan;CHEN Yichuan;ZHU Wenjun;SHUAI Weiqiang;LAO Zixuan(Department of Mechanical and Electronic Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333403, Jiangxi, China)

机构地区：[1]景德镇陶瓷大学机械电子工程学院,江西景德镇333403

出　　处：《陶瓷学报》2019年第2期186-190,共5页Journal of Ceramics

基　　金：国家自然科学基金(6146005);江西省科技厅重点研发计划项目(20171BBE50053);江西省主要学科科学带头人项目(20123BCB22002)

摘　　要：使用射频磁控溅射法在石英衬底上制备ZnO掺Ga薄膜(GZO),通过调制不同的溅射功率制备GZO薄膜,研究了溅射功率对GZO薄膜光电学性能的影响。对不同溅射功率下的GZO薄膜进行X射线衍射、扫描电镜(SEM)、内应力、紫外可见光光谱、光致发光谱分析和电学性能分析。结果表明:随着溅射功率的提高,GZO薄膜保持良好的C轴择优取向;薄膜结晶度增加,晶界减少,晶粒尺寸增大;透光性减小;薄膜缺陷降低;薄膜表面方块电阻下降。Ga-doped ZnO thin films (GZO) were prepared on quartz substrates by RF magnetron sputtering. The effects of sputtering power on the optical and electrical properties of GZO thin films were studied. X-ray diffraction, scanning electron microscopy (SEM), internal stress, ultraviolet and visible spectra, photoluminescence spectra and electrical properties of GZO thin films were analyzed under different sputtering power. The results show that with the increase of sputtering power, the GZO film keeps a good C-axis preferred orientation, the crystallinity of the film increases, the grain boundary decreases, the grain size increases, the transmittance decreases, the defect of the film decreases, and the square resistance of the film surface decreases.

关 键 词：溅射功率 晶粒尺寸 方阻 透光性 

分 类 号：TQ174.75[化学工程—陶瓷工业]