碳化硅表面结构对光催化活性的影响  

Effect of Surface Structure of Silicon Carbide on Photocatalytic Activity

作　　者：郭雨 冯纪章[4] 郭腾 陈君华 柏雷 周永生 叶祥桔 徐卫兵 GUO Yu;FENG Ji-zhang;GUO Teng;CHEN Jun-hua;BAI Lei;ZHOU Yong-sheng;YE Xiang-ju;XU Wei-bing(College of Chemistry and Materials Engineering,Anhui Science and Technology University,Bengbu 233100,China;College of Chemistry and Chemical Engineering,Hefei University of Technology,Hefei 230009,China;Postdoctoral Research Station,Anhui DeLi Household Glass Co.,Ltd.,Fengyang 233121,China;Sedin Engineering Co.,Ltd.,Taiyuan 030032,China)

机构地区：[1]安徽科技学院化学与材料工程学院,安徽蚌埠233100 [2]合肥工业大学化学工程学院,安徽合肥230009 [3]安徽德力日用玻璃股份有限公司博士后工作站,安徽凤阳233121 [4]赛鼎工程有限公司,山西太原030032

出　　处：《中北大学学报（自然科学版）》2019年第3期243-249,256,共8页Journal of North University of China(Natural Science Edition)

基　　金：国家自然科学基金资助项目(21603002);安徽科技学院重点学科建设项目(AKZDXK/2015A01);安徽科技学院稳定高层次人才项目(AHSTU-SHTP201801)

摘　　要：为了提高SiC光催化性能,采用化学浸蚀法对碳化硅表面氧化层进行减薄处理,并对其表面形态和化学成分进行XRD、TEM、UV-vis DR、SXPS和FT-IR表征.结果表明:物相、形貌和光学带隙并没有发生改变,而XPS和FT-IR结果则表明碳化硅表面的Si—C结构转变为Si—O—Si结构.最优浸蚀条件和偏压条件下,即偏置电压±500V,浸蚀时间10h和氢氧化钠浓度1mol·L-1,紫外光催化效率和光电催化效率分别达到了45.9%和80%.与未改性碳化硅样品相比,NaOH浸蚀后SiC对光降解MB具有显著的光催化和光电催化活性,其光催化效率分别增大了24和36倍.Surface modification studies on SiC to improve photocatalytic performance were presented in this work.The surface of SiC was treated by chemical etching process to thin oxide layers.The surface configuration and chemical composition of SiC during the etching process were determined by XPS and FT-IR.The results show that the crystal structure,morphology and optical band gap did not change significantly.XPS and FT-IR results show that Si-C bonds on the SiC surface break and form new Si-O-Si bonds.Under the optimum optimal etching conditions and bias condition,i.e.bias voltage=±500 V,etching time=10 h and the concentration of NaOH=1 mol·L^-1,about 45.9%and 80%MB removal was achieved under UV irradiation and under UV irradiation and bias voltage,respectively.Compared with the unmodified SiC sample,SiC is chemically treated with NaOH solution to enhance photocatalytic activity and photoelectrocatalytic activity in the UV light region,and the photocatalytic efficiency is increased by 24 and 36 times.

关 键 词：碳化硅 光电催化 化学浸蚀 表面改性 

分 类 号：O644.1[理学—物理化学]