Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals  

作　　者：Guiying Shen Youwen Zhao Yongbiao Bai Jingming Liu Hui Xie Zhiyuan Dong Jun Yang Ding Yu 

机构地区：[1]Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices,Institute of Semiconductors, Chinese Academy of Sciences [2]Center of Materials Science and Opto-Electronics Engineering, University of Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2019年第4期13-16,共4页半导体学报（英文版）

摘　　要：Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski(LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is the dominant defect in n-type GaSb with low Te-doping concentration. As the Te concentration increases, gallium vacancy related defects become the main acceptor. A new band of around 665 meV is observed in the GaSb sample with the lowest Te-doping concentration. The variation of the acceptor defects and their influence on the electronic and optical property on the n-GaSb single crystal are discussed based on the results.Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski(LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is the dominant defect in n-type GaSb with low Te-doping concentration. As the Te concentration increases, gallium vacancy related defects become the main acceptor. A new band of around 665 meV is observed in the GaSb sample with the lowest Te-doping concentration. The variation of the acceptor defects and their influence on the electronic and optical property on the n-GaSb single crystal are discussed based on the results.

关 键 词：Te-doped GASB HALL native DEFECTS PL 

分 类 号：TN[电子电信]