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作 者:郝建红[1] 范宗皓 李艺 HAO Jian-hong;FAN Zong-hao;LI Yi(School of Electrical&Electronic Engineering,North China Electric Power University,Beijing 102206,China)
机构地区:[1]华北电力大学电气与电子工程学院
出 处:《仪表技术与传感器》2019年第4期10-14,19,共6页Instrument Technique and Sensor
基 金:国家自然科学基金项目(61372050);科技部区及科技合作项目(2011DFR00780)
摘 要:研究了一种量程为800kPa的改进型梁-岛-膜结构MEMS压阻式压力传感器,通过与常见的C型和E型结构进行仿真对比,证明这种改进型结构的传感器灵敏度得到了很大提高。采用Intel liSuite仿真分析最大等效应力、挠度和输出电压,得出在中心膜尺寸为2.6mm×2.6mm×60μm,梁尺寸为400μm×200μm×60μm,岛尺寸为1.3mm×1.3mm×370μm的情况下,该结构具有较高的线性度和灵敏度,同时进行了制版与加工流程定义。为了实现结构的优化,设计了压敏电阻的尺寸和阻值,通过对改进型结构的仿真,确定了获得最大电压输出时压敏电阻的尺寸;并分析比较了同一硅杯尺寸下3种结构不同压力下的最大等效应力、挠度和输出电压分布图,得出改进型结构灵敏度最佳。A MEMS piezoresistive pressure sensor with improved beam to island membrane structure with a range of 800kPa was studied.Compared with the common C and E structure,the sensitivity of the improved structure sensor was greatly improved.Analysed by IntelliSuite simulation,when the central film size was 2.6 mm×2.6 mm×60μm,the beam size was 400μm×200μm×60μm,the island size was 1.3 mm×1.3 mm×370μm,then the structure had good linearity and high sensitivity.At the same time,the definition of plate making and processing process was carried out.In order to optimize the structure,the size and resistance of varistors were designed.Through the simulation of the improved structure,the size of varistors was obtained when the maximum voltage output was obtained.Meanwhile the maximum equivalent stress,deflection and output voltage distribution map of three kinds of different pressure under the same silicon cup size were analyzed and compared,and the sensitivity of the improved structure is the best.
关 键 词:压阻式压力传感器 压敏电阻 IntelliSuite 改进型梁-岛-膜结构 MEMS 灵敏度
分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置]
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