TiO2纳米管刻蚀生长机理及其光电性能（英文）  

Growth Mechanism of TiO2 Nanotube Arrays by Etching Treatment and Their Photoelectric Property

作　　者：孙琼[1,2] 游迪 臧韬 吴松浩 洪永 董立峰[1] SUN Qiong;YOU Di;ZANG Tao;WU Song-hao;HONG Yong;DONG Li-feng(College of Materials Science and Engineering,Qingdao University of Science and Technology,Qingdao 266042,China;State Key Laboratory of Photocatalysis on Energy and Environment,Fuzhou University,Fuzhou 350116,China)

机构地区：[1]青岛科技大学材料科学与工程学院,山东青岛266042 [2]福州大学能源与环境光催化国家重点实验室,福建福州350116

出　　处：《发光学报》2019年第4期459-467,共9页Chinese Journal of Luminescence

基　　金：国家自然科学基金青年基金(51402161);福州大学能源与环境光催化国家重点实验室开放课题(SKLPEE-KF201707)资助项目~~

摘　　要：采用盐酸将有序排列的TiO2纳米棒刻蚀成纳米管,并推测了生长机理。刻蚀过程中,凹陷沿棒生长方向自上而下由内而外产生,最终形成管式结构。大量纳米线围绕成具有方形空心截面的纳米管,高温下将完全分裂。TiO2纳米管的光电转换效率远高于纳米棒,最高值(3.26%)出现在140℃刻蚀温度。纳米管比表面积增加和长度缩短分别对光电性能起到正反两方面作用。此外,煅烧导致纳米管断裂和聚集,光生载流子定向转移的难度增加,光电转换效率降低。In this research, densely aligned TiO2 nanorods are etched into nanotubes by hydrochloric acid, and the growth mechanism is also supposed. During the etching process, the dents appear from the top down and inside out along the growth direction of the nanorod, and finally form the tube structure. Actually, the nanotube with square hollow cross section consists of a mass of surrounded fine nanowires, which will be teared into independent ones at high temperature. When assembled into dye sensitized solar cells(DSSCs), the photoelectrical conversion efficiency of TiO2 nanotubes is much higher than that of nanorods, and the highest value(3.26%) is located at the etching temperature of 140 ℃. It could be deduced that the increased specific surface area and length shortening of the nanotube play the positive and negative effect on the photoelectrical property, respectively. Furthermore, the calcination effect on the structure and photovoltaic property of TiO2 nanotubes is also carried out. However, the fracture and aggregation of nanotubes could be observed after heating treatment, which therefore increase the difficulty of photo-induced carriers in directional transfer and also reduce the photoelectrical activity.

关 键 词：TIO2纳米管 刻蚀 生长机理 光电性能 

分 类 号：TN36[电子电信—物理电子学]