以硫氰酸亚铜作为空穴注入层的钙钛矿发光器件  

Perovskite Light-emitting Devices Based on CuSCN Hole Injection Layer

作　　者：吴燕婷 肖择武 任杰 王琦 杨晓晖 WU Yan-ting;XIAO Ze-wu;REN Jie;WANG Qi;YANG Xiao-hui(School of Physical Science and Technology,Southwest University,Chongqing 400715,China)

机构地区：[1]西南大学物理科学与技术学院

出　　处：《发光学报》2019年第4期504-510,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61177030,11474232)资助项目~~

摘　　要：同有机电荷注入材料相比,无机电荷注入材料具有许多优良的性质,包括高载流子迁移率、良好的稳定性、制备简单和成本低廉等,其在光电器件中的应用备受瞩目。本文采用硫氰酸亚铜(CuSCN)作为有机金属卤化物钙钛矿发光器件的空穴注入层,研究了在其上涂敷钙钛矿薄膜的形貌、晶体结构和光物理性质,并与在普遍采用的导电聚合物空穴注入层上制备钙钛矿薄膜的特性进行了比较。实验结果表明,CuSCN对钙钛矿发光具有显著的猝灭作用,在CuSCN与钙钛矿层之间加入有机间隔层能够明显提高钙钛矿薄膜的发光强度。在此基础上制备了以CuSCN作为空穴注入层的发光器件,器件的最大发光效率为11.7cd/A,较采用导电聚合物作为空穴注入层器件的效率提高了近3倍,并且器件驱动稳定性也有一定程度的提高。Compared with their organic counterparts, inorganic charge injection materials possess many tempting properties including high charge carrier mobility, good stability, simple preparation, and low cost, and their applications in optoelectronic devices have been extensively studied. It is reported that cuprous thiocyanate(CuSCN) is utilized as hole injection layer for organometal halide perovskite light-emitting devices. The morphology, crystallite structure, and photo-physics properties of the perovskite films deposited onto CuSCN layer have been studied and further compared with the attributes of the analogs on top of a conducing polymer hole injection layer. The results show that CuSCN has a significant quenching effect on perovskite luminescence. Adding a polymer hole-transporting interlayer between CuSCN and perovskite layer can largely increase the perovskite emission intensity. On this basis, it is reported that the maximum luminous efficiency of the CuSCN-based devices is 11.7 cd/A, nearly 3 times that of the conducting polymer hole injection layer analogs, and the device stability is also improved.

关 键 词：无机材料空穴注入层 硫氰酸亚铜 发光猝灭 钙钛矿发光器件 

分 类 号：O472[理学—半导体物理]