一种高压PMOS器件低剂量辐照效应分析  

An Effect Analysis Induced by Low Dose Radiation Impact PMOS Transistor

作　　者：高炜祺[1] 刘虹宏 GAO Weiqi;LIU Honghong(Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp.,Chongqing 400060,China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《空间电子技术》2019年第2期79-82,共4页Space Electronic Technology

摘　　要：对MOS器件总剂量辐照机理的研究,多从γ射线在SiO_2中产生电子-空穴对,以及γ射线作用在SiO_2-Si界面上产生新生界面态方面出发,分析γ射线对MOS器件的阈值影响,但很少分析γ射线对高压MOS器件漏源击穿电压的影响。文章针对低剂量γ射线对高压PMOS器件中漏源击穿电压的作用进行综合分析;重点研究了低剂量辐照情况下高压PMOS器件的漏源击穿电压特性相对于常规剂量辐照后的变化。研究表明:低剂量的γ射线会引起高压PMOS器件漏源发生严重漏电;高压PMOS器件版图设计不当时,长期的低剂量γ射线会引起高压CMOS集成电路发生功能失效的风险。For existing total dose radiation impact MOS transistor,more attention is paid to transformation of threshold volt leaded by electron hole pair and new bound state between SiO 2-Si from γ ray,while the study about influence to drain-source breakdown voltage of high-voltage MOS transistor is rarely reported.The effect to drain-source breakdown voltage of high-voltage PMOS transistor induced by low dose radiation were analyzed.The different property lead by low dose and property dose were emphatically studied.Studied result indicates that electric leakage of high-voltage PMOS transistor is raised by low dose radiation.If layout of PMOS transistor is improper,the risk of functional failure of high-voltage CMOS integrated circuit is influenced by long time and low dose radiation.

关 键 词：高压PMOS器件 低剂量辐照 PMOS版图 漏源击穿电压 

分 类 号：V474[航空宇航科学与技术—飞行器设计]