Review of gallium-oxide-based solar-blind ultraviolet photodetectors  

作　　者：XUANHU CHEN FANGFANG REN SHULIN GU JIANDONG YE 

机构地区：[1]School of Electronics Science and Engineering, Nanjing University

出　　处：《Photonics Research》2019年第4期381-415,共35页光子学研究（英文版）

基　　金：National Key Research and Development Project(2017YFB0403003,2018YFB0406502);National Natural Science Foundation of China(NSFC)(61322403,61774081);State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices(2017KF001);Natural Science Foundation of Jiangsu Province(BK20161401);State Key R&D Project of Jiangsu(BE2018115);Fundamental Research Funds for the Central Universities(021014380085,021014380093);Postgraduate Research and Practice Innovation Program of Jiangsu Province

摘　　要：Solar-blind photodetectors are of great interest to a wide range of industrial, civil, environmental, and biological applications. As one of the emerging ultrawide-bandgap semiconductors, gallium oxide(Ga_2O_3) exhibits unique advantages over other wide-bandgap semiconductors, especially in developing high-performance solar-blind photodetectors. This paper comprehensively reviews the latest progresses of solar-blind photodetectors based on Ga_2O_3 materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys.The basic working principles of photodetectors and the fundamental properties and synthesis of Ga_2O_3, as well as device processing developments, have been briefly summarized. A special focus is to address the physical mechanism for commonly observed huge photoconductive gains. Benefitting from the rapid development in material epitaxy and device processes, Ga_2O_3-based solar-blind detectors represent to date one of the most prospective solutions for UV detection technology towards versatile applications.Solar-blind photodetectors are of great interest to a wide range of industrial, civil, environmental, and biological applications. As one of the emerging ultrawide-bandgap semiconductors, gallium oxide(Ga_2O_3) exhibits unique advantages over other wide-bandgap semiconductors, especially in developing high-performance solar-blind photodetectors. This paper comprehensively reviews the latest progresses of solar-blind photodetectors based on Ga_2O_3 materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys.The basic working principles of photodetectors and the fundamental properties and synthesis of Ga_2O_3, as well as device processing developments, have been briefly summarized. A special focus is to address the physical mechanism for commonly observed huge photoconductive gains. Benefitting from the rapid development in material epitaxy and device processes, Ga_2O_3-based solar-blind detectors represent to date one of the most prospective solutions for UV detection technology towards versatile applications.

关 键 词：Solar-blind photodetectors ultrawide-bandgap SEMICONDUCTORS wide-bandgap SEMICONDUCTORS 

分 类 号：O4[理学—物理]