高工作电压GaAs HFET  

High Operating Voltage GaAs HFET

作　　者：陈正廉 林罡[1] CHEN Zhenglian;LIN Gang(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2019年第2期106-110,共5页Research & Progress of SSE

摘　　要：通过对结构和性能的分析与优化,设计并研制了不同场板和宽槽条件下的高工作电压GaAs HFET器件。直流和射频测试结果表明:提升场板长度和宽槽宽度可以有效提高器件的工作电压。器件在南京电子器件研究所流片,最终制备出的器件性能为:击穿电压大于84 V,在20 V工作电压下截止频率为9 GHz,3 GHz时功率增益为15.87 dB、功率附加效率为53%。High operating voltage GaAs HFETs with different field-plates and wide-recesses were designed and fabricated after performance analysis and structure optimization.The DC test and RF test results indicate that increasing wide-recess and field-plate can improve operating voltage of device?The device is fabricated in Nanjing Electronic Devices Institute.The final performances of device are that breakdown voltage is greater than 84 V,cut-off frequency is 9 GHz at 20 V,power gain is 15.87 dB and power added efficiency is 53%at 3 GHz.

关 键 词：GaAs异质结场效应管 场板 宽槽 工作电压 

分 类 号：TN386.3[电子电信—物理电子学]