镀覆工艺对功率外壳金锡/金硅焊接的可靠性研究  

Study on the Reliability of Plating Process to the Power Packages AuSn/AuSi Welding

作　　者：谢新根[1] 程凯[1] 李鑫 孙林 XIE Xingen;CHENG Kai;LI Xin;SUN Lin(Nanjing Electronic Devices Institute ,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2019年第2期144-149,共6页Research & Progress of SSE

摘　　要：通过功率外壳金硅(AuSi)焊接失效案例,研究了铜-钼铜-铜(CPC)、铜-钼-铜(CMC)为热沉材料的功率外壳镀覆工艺,包括在CPC(或CMC)材料无氧铜表面高温重新形成晶格,采用外延生长型NiCo/Au替代Ni/Au镀层。镀覆工艺优化后,功率外壳金锡(AuSn)或AuSi芯片焊接可靠性得到了显著改善。Through the failure case of AuSi welding of power package,the plating processes of power package with Cu-MoCu-Cu(CPC),Cu-Mo-Cu(CMC)as heat sink material were studied,including recrystallization of crystal lattice on the surface of oxygen free copper of CPC(or CMC)at high temperature,replacement of the Ni/Au coating with the epitaxial growth type NiCo/Au.After the plating process is optimized,the reliability of the power package AuSn or AuSi chip solder has been significantly improved.

关 键 词：功率外壳 金锡 金硅 晶格 外延生长 镍钴 

分 类 号：TN305[电子电信—物理电子学]