β-Ga_2O_3单晶腐蚀坑形貌研究  

Investigations on the Morphologies of the Etch-Pits of β-Ga_2O_3 Single Crystals

作　　者：杨丹丹[1] 金雷 张胜男 练小正[1] 孙科伟 程红娟[1] 徐永宽[1] Yang Dandan;Jin Lei;Zhang Shengnan;Lian Xiaozheng;Sun Kewei;Cheng Hongjuan;Xu Yongkuan(The 46th Research Institute , CETC, Tianjin 300220, China;Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education /Guangdong Province , College of Optoelectronic Engineering , Shenzhen University,Shenzhen 518060, China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220 [2]深圳大学光电工程学院光电子器件与系统(教育部/广东省)重点实验室,深圳518060

出　　处：《微纳电子技术》2019年第6期435-439,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(51702297);天津市科技计划项目(17YFZCGX00520;17ZXCLGX00020)

摘　　要：详细介绍了(100)、(010)和(■01)三种不同晶面的β-Ga_2O_3单晶腐蚀坑形貌状态及不同形貌的演变过程。所用β-Ga_2O_3单晶样品均为导模法(EFG)制备,且经过研磨、化学机械抛光(CMP),表面质量良好。以质量分数为85%的分析纯H_3PO_4溶液为腐蚀液,腐蚀时间为1.5 h,腐蚀温度为90℃时,(100)、(010)和(■01)晶面腐蚀坑密度分别约为6.9×10^(4 )cm^(-2)、2.3×10^(4 )cm^(-2)和7.7×10^(4 )cm^(-2)。通过光学显微镜和扫描电子显微镜(SEM)观察,结果表明(100)面腐蚀坑形状为非对称六边形,(010)面腐蚀坑形貌为菱形,(■01)面腐蚀坑形貌为倾斜的五边形,并确定了(100)面、(010)面、(■01)面的最终腐蚀坑状态,腐蚀坑的不同形状可能与不同晶向β-Ga_2O_3表面状态的耐化学腐蚀差异有关。The states and evolution process of different morphologies of the etch-pits on (100),(010) and (■01) crystal planes of β-Ga2O3 single crystal were investigated in detail.The β-Ga2O3 single crystal samples were prepared by edge-defined film fed growth(EFG).And then all the samples were grinded and polished by chemically mechanical polishing(CMP)to achieve high surface quality.After the crystal planes were corroded by analytical H3PO4 solution (mass fraction is 85%) at 90℃ for 1.5 h,the densities of the etch-pits for (100),(010) and (■01)crystal planes were observed to be approximately 6.9×104cm^-2,2.3×104cm^-2,and 7.7×104cm^-2,respectively.The results of the optical microscopy and scanning electron microscopy(SEM)demonstrate different morphologies of the etch-pits i.e.asymmetric hexagonal shape for (100),diamond shape for (010) and tilted pentagonal shape for (■01).Besides,the finally states of the etch-pits for(100),(010)and (■01) crystal planes were determined,and the diverse shapes of the etch-pits could be associated with the difference in the resistance to the chemical corrosion due to the surface states on different orientations of β-Ga2O3 single crystals.

关 键 词：导模法(EFG) β-Ga2O3单晶 位错密度 腐蚀坑形貌 扫描电子显微镜(SEM) 

分 类 号：TN305.2[电子电信—物理电子学]