热型ALD技术制备镍薄膜及其金属硅化物  

Growth of Nickel Thin Film and Nickel Silicide by Thermal ALD

作　　者：乌李瑛 瞿敏妮 沈贇靓 王英[1] 程秀兰 Wu Liying;Qu Minni;Shen Yunliang;Wang Ying;Cheng Xiulan(Center for Advanced Electronic Materials and Devices , School of Electronic Information and ElectricalEngineering<, Shanghai Jiao Tong University , Shanghai 200240, China)

机构地区：[1]上海交通大学电子信息与电气工程学院先进电子材料与器件平台,上海200240

出　　处：《微纳电子技术》2019年第6期486-492,共7页Micronanoelectronic Technology

基　　金：国家科技部"十三五"高性能计算重点研发计划项目子课题(2016YFB0200205);2018年度上海研发公共服务平台建设项目(18DZ2295400)

摘　　要：金属硅化物材料具有较低的接触电阻,并且与硅材料有较好的兼容性,所以在互补金属氧化物半导体(CMOS)器件中被看作是重要的电极材料。形成镍金属硅化物的关键是镍金属单质的淀积工艺。如何在大深宽比纳米尺度的三维结构中沉积保形性好、纯度高、导电性好的镍金属单质薄膜是亟需解决的问题。利用热法原子层沉积(ALD)技术,以一种新型脒基镍前驱体[Ni(iPr-MeAMD)]_2,在深宽比为10:1的硅基底沟槽中沉积得到纯度高、保形性好、连续平滑的镍薄膜。对薄膜进行了X射线衍射(XRD)测试,为单一的α六方晶体结构。考察了不同退火温度下镍金属硅化物的形成,利用扫描电子显微镜(SEM)、能量色散谱(EDS)和XRD进行了物相相变的分析。退火温度400℃下得到NiSi相,其薄膜电阻率最低,约为34μΩ·cm。Metal silicides are used as important electrode materials for complementary metaloxide-semiconductor(CMOS)devices due to their low contact resistances and good compatibility with Si.The key of the formation of nickel silicide is the deposition process of nickel single metal.The deposition of nickel thin film with good shape retention,high purity and good conductivity in three-dimensional structures with high aspect ratio is an urgent problem to be solved.A novel precursor of nickel amidinate [Ni(iPr-MeAMD)]2 was used,the thermal atomic layer deposition(ALD)technology was used to deposit the continuous and smooth nickel thin films with high purity and good shape retention in the trench of the silicon substrate with the aspect ratio of 10:1.The deposited film was tested with the X-ray diffraction(XRD).And the result shows a singleαhexagonal crystal structure.The formation of nickel silicide at different annealing temperatures was investigated,and the phase transition was analyzed by the scanning electron microscope(SEM),energy dispersion spectrum(EDS)and XRD.NiSi phase was obtained at the annealing temperature of 400℃,and the resistivity of which was the lowest,about 34μΩ·cm.

关 键 词：镍(Ni)薄膜 原子层沉积(ALD) 沉积速率 金属硅化物 互补金属氧化物半导体(CMOS) 

分 类 号：TN304.055[电子电信—物理电子学]