Ni掺杂ZnO纳米棒阵列膜的增强紫外光电响应  

Enhanced photoelectric response of Ni-doped ZnO nanorod film prepared by hydrothermal method under UV illumination

作　　者：姜晓彤 鲁林芝 谢长生[1] JIANG Xiaotong;LU Linzhi;XIE Changsheng(School of Material Science and Technology,Huazhong University of Science and Technology,Wuhan 430070,China)

机构地区：[1]华中科技大学材料科学与工程学院,武汉430074

出　　处：《功能材料》2019年第5期5001-5005,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50927201)

摘　　要：研究以醋酸镍为Ni源,通过水热方法合成不同浓度Ni掺杂的ZnO纳米棒阵列膜,采用XRD、PL以及XPS等测试方法对掺杂的ZnO纳米棒阵列膜进行结构表征,通过自制的光电性能平台进行光电导性能的测试。研究结果表明,Ni的掺杂改变了ZnO晶格常数的大小。掺杂后的ZnO纳米棒阵列膜的光响应度很高,其中醋酸镍浓度为0.05 mol/L的ZnO纳米棒阵列膜的光响应度最高,可以达到3 112.1,是纯ZnO纳米棒阵列膜的光响应度的38倍。Ni的掺杂使得ZnO纳米棒的耗尽层宽度拓宽,降低了暗电导,从而使得光响应度增大。In this paper,Ni-doped ZnO nanorod arrays with different concentrations were synthesized by hydrothermal method using nickel acetate as Ni source. The structure of doped ZnO nanorod arrays was characterized by XRD,PL and XPS,and the photoconductivity was tested by self-made photoelectric performance platform. The results show that the doping of Ni changed the lattice constant of ZnO. The photoresponse of doped ZnO nanorod array films was very high. Among them,the photoresponse of ZnO nanorod array films with nickel acetate concentration of 0.05 mol/L was the highest,reaching 3 112.1,which was 38 times higher than that of pure ZnO nanorod array films. The doping of Ni broadened the depletion layer width of ZnO nanorods,reduced dark conductance and increased the photoresponse.

关 键 词：光响应度 ZNO Ni掺杂 纳米棒阵列膜 

分 类 号：O472[理学—半导体物理]