氮化镓基PIN紫外探测器芯片研究  

GaN based PIN ultraviolet detectors Chip

作　　者：李建婷 孟锡俊 Li Jianting;Meng Xijun(Zoomview Oprtoelectronic,Co.,LTD,Xi’an Shaanxi,710065)

机构地区：[1]西安中为光电科技有限公司

出　　处：《电子测试》2019年第11期63-64,共2页Electronic Test

摘　　要：通过对氮化镓基PIN紫外探测器不同外延结构及芯片制备工艺的研究,发现探测器性能和外延层结晶质量及芯片制备工艺有很大的关系。采用ITO扩展电极制备的探测器反向漏电很大,暗电流高,采用Ni/Au半透明电极制备的探测器芯片,光电流相对ITO透明电极有一定程度的降低,但能保证较低的暗电流,防止器件漏电。In this paper, through the study of different epitaxial structures and chip fabrication processes of GaN-based PIN UV detectors, it is found that the performance of the detector has a great relationship with the crystal quality of the epitaxial layer. The detector prepared by the ITO has large reverse leakage current and high dark current. The detector chip prepared by Ni/Au translucent electrode has a certain decrease in photocurrent relative to the ITO transparent electrode, but can ensure a lower darkness to prevent leakage of the device.

关 键 词：探测器 紫外 NI/AU ITO 

分 类 号：TN23[电子电信—物理电子学]