基于实频技术的1.3～2.4 GHz宽带功率放大器的研究  

The 1.3～2.4 GHz wide-band power amplifier design based real-frequency techniques

作　　者：裴魏魏 韩海生[1] 吴云飞[1] 魏桂丹 PEI Weiwei;HAN Haisheng;WU Yunfei;WEI Guidan(College of Science,Jiamusi University,Jiamusi 154007,China)

机构地区：[1]佳木斯大学理学院

出　　处：《黑龙江工程学院学报》2019年第3期50-53,共4页Journal of Heilongjiang Institute of Technology

基　　金：佳木斯大学科学技术研究面上项目(L2014-014);黑龙江省教育厅科研项目(2016-KYYWF-0569)

摘　　要：功率放大器作为射频微波发射机系统中的关键部件,一直成为学术界以及产业界的重点研究对象。主要对功放的性能提升技术进行相应的研究,使用实频技术研究功放的匹配技术,首先理论分析实频技术,然后通过ADS进行仿真验证,仿真结果表明,使用CGH40010FGaN HEMT功放管进行输入输出匹配网络,在1.3~2.4GHz频率范围内功放的漏极附加效率不小于58%,输出饱和功率≥40dBm,功放增益>6.5dB,显著地提升功放效率以及功放的输出功率。As a key component in the RF/microwave transmitter system,power amplifier has always been the research focus of scientific researcher and industry.This paper mainly studies the performance improvement technology of power amplifier.Using the real frequency technology to study the matching technology of power amplifier,firstly this paper analyzes the real frequency technology theoretically,and then carries out simulation verification through ADS.The simulation result shows that the CGH40010F GaN HEMT power amplifier transistor is used.The input and output matching network are carried out.In the frequency range of 1.3~2.4 GHz,the power added efficiency of the power amplifier is not less than 58%,the output saturation power is≥40 dBm,and the power amplifier gain is≥6.5 dB.The power amplifier efficiency is significantly improved,and the output power of the power amplifier is improved.

关 键 词：实频技术 HEMT 漏极效率 饱和功率 

分 类 号：O157.5[理学—数学]