数字掩模投影光刻的极限分辨率研究  

Limit resolution of digital mask projection lithography

作　　者：刘玉环 赵圆圆[2] 董贤子[1] 郑美玲[1] 段宣明[1,2] 赵震声[1] LIU Yuhuan;ZHAO Yuanyuan;DONG Xianzi;ZHENG Meiling;DUAN Xuanming;ZHAO Zhensheng(Laboratory of Organic NanoPhotonics and CAS Key Laboratory of Bio-Inspired Materials and Interfacial Science,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Beijing 100190,China;Chongqing Institute of Green and Intelligent Technology,Chinese Academy of Sciences,Chongqing 401122,China;School of Future Technologies ,Graduate University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院理化技术研究所仿生智能界面科学中心,北京100190 [2]中国科学院重庆绿色智能技术研究院,重庆401122 [3]中国科学院大学未来技术学院,北京100049

出　　处：《量子电子学报》2019年第3期354-359,共6页Chinese Journal of Quantum Electronics

基　　金：科技部国家重点研发纳米科技重点专项,2016YFA0200501~~

摘　　要：研究了一种基于数字微镜器件(DMD)的数字掩模投影光刻(DMPL)技术,以400 nm飞秒激光作为光源,结合高缩放比投影系统,来缩小光刻胶与光子束的反应区域,通过调控不同DMD像素投影光场强度分布,将投影光刻的线宽分辨率推进至亚微米尺度,实现了具有跨尺度加工能力(单次曝光面积在百微米以上,曝光精度在百纳米)的DMPL技术,同时详细对比分析了DMPL中存在的几何和物理光学模型,阐明了像素个数与加工结构尺寸的关系,并进一步基于物理光学模型分析了DMPL中极限分辨率的关键科学问题。A digital-mask projection lithography(DMPL)technology based on digital micro-mirror device(DMD)is proposed.The femtosecond laser is used as a light source,combining with a high zoom ratio objective lens to shrink the reaction region of photoresist with photons.By adjusting the light field distribution,the spatial resolution of the DMD projection lithography is improved to submicron,and maskless projection lithography with a cross-scale processing capability(a single exposure area of over 100μm and an exposure accuracy of hundreds nanometers)is realized.Detailed analysis of the geometry and physical optics models is studied theoretically.The relationship between the number of pixels and the size of the processing structure are clarified.The key technical issues of limited resolution in DMPL are investigated based on the physical optics model.

关 键 词：激光技术 仪器数字掩模投影光刻 数字微镜器件 跨尺度 飞秒激光 分辨率 

分 类 号：STN249[电子电信—物理电子学] TN305.7