PbSe/MoSe2异质结光敏二极管研制  

Fabrication of PbSe/MoSe2 heterojunction photodiode

作　　者：范旭东 代天军 潘棋 刘兴钊[1] FAN Xudong;DAI Tianjun;PAN Qi;LIU Xingzhao(State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China)

机构地区：[1]电子科技大学电子科学与工程学院电子薄膜与集成器件国家重点实验室

出　　处：《电子元件与材料》2019年第6期86-89,共4页Electronic Components And Materials

基　　金：国家自然科学基金(61875029)

摘　　要：采用分子束外延制备了PbSe与MoSe2薄膜,使用Raman光谱和XRD衍射谱进行表征;并研制出PbSe/MoSe2异质结光敏二极管,研究了其光电响应特性。使用1300nm红外光源照射,在零偏压和-5V偏压加载下,所研制异质结光敏二极管的探测率分别为5×10^9cm·Hz^1/2·W^-1和2.9×10^11cm·Hz^1/2·W^-1,显示出优异的光电响应特性。尤其在负偏压工作模式下,由于器件处于关断状态,具有更低的暗电流,因此,具有更高的光/暗电流比和更加优异的综合性能。The thin films of PbSe and MoSe2 were prepared by molecular beam epitaxy (MBE) and characterized by X-ray diffraction (XRD) and Raman spectra. PbSe/MoSe2 heterojunction photodiodes were fabricated, and the photoelectric response characteristics were measured. Under the 1300 nm infrared radiation, detectivity of the heterojunction photodiode can reach 5×10^9 cm Hz^1/2 W^-1and2.9×10^11cm Hz^1/2 W^-1 under zero-bias and -5V bias respectively. The photodiode demonstrates excellent photoelectric characteristics. Especially, the device shows higher photo/ dark current ratio and superior performance due to the lower dark current resulting from the OFF-state under the negative bias.

关 键 词：硒化铅 硒化钼 异质结 光敏二极管 红外探测器 

分 类 号：TN215[电子电信—物理电子学]