新型半超结逆导IGBT的导通机理分析  

Analysis of conduction mechanism of a novel semi-superjunction reverse conducting IGBT

作　　者：陆素先 向超 钟传杰[1] LU Su-xian;XIANG Chao;ZHONG Chuan-jie(College of Internet of Things,Jiangnan University,Wuxi 214122,China;SIPPR Engineering Group Co.,Ltd.,Zhengzhou 450007,China)

机构地区：[1]江南大学物联网工程学院,江苏无锡214122 [2]机械工业第六设计研究院,河南郑州450007

出　　处：《电子设计工程》2019年第12期176-180,共5页Electronic Design Engineering

摘　　要：本文对半超结逆导IGBT这一新型结构的导通机理进行分析。通过SilvacoTCAD软件仿真验证,半超结RC-IGBT的耐压能力、正反向导通能力都明显优于传统RC-IGBT。详细分析了电荷不平衡效应对器件耐压能力的影响,并给出了N/P-柱掺杂浓度合理的取值范围。此外提出由于半超结RC-IGBT器件内寄生PNP三极管与传统RC-IGBT寄生三极管大不相同,电导调制效应主要发生在N/P-柱以下的漂移区内,也正是因为其特殊的导通机理使得半超结技术对解决负阻效应具有重要意义。In this paper,we introduce a new structure of semi-superjunction reverse-conducting IGBT and analyze its conducting mechanism.Through the simulation of Silvaco TCAD software,the blocking capability,positive and negative conduction capability of the semi-superjunction RC-IGBT are significantly better than the traditional RC-IGBT.The influence of charge imbalance effect on the blocking capability of the device is analyzed in detail,and the reasonable range of N/P-pillar doping concentration is given.In addition,it is proposed that the parasitic PNP transistor in the semi-superjunction RC-IGBT device is very different from the traditional RC-IGBT parasitic transistor,and the conductance modulation effect mainly occurs in the drift region below the N/P-pillar.Just for this unique characteristic,semi-superjunction technology has great significance for solving the snapback effect.

关 键 词：半超结 逆导IGBT 负阻效应 击穿电压 电荷不平衡效应 

分 类 号：TN389[电子电信—物理电子学]