低温度系数低功耗带隙基准的设计  

Design of Low Temperature Coefficient and Low Power Bandgap Reference Circuit

作　　者：吴庆 李富华[1] 黄君山 侯汇宇 WU Qing;LI Fuhua;HUANG Junshan;HOU Huiyu(Soochow University,Suzhou 215000,China;Gemeixin Microelectronics Co.,Ltd.,Suzhou 215000,China)

机构地区：[1]苏州大学,江苏苏州215000 [2]格美芯微电子有限公司,江苏苏州215000

出　　处：《电子与封装》2019年第6期25-28,共4页Electronics & Packaging

摘　　要：对带隙基准电压源的温度系数和功耗进行了分析研究,采用与绝对温度成正比(PTAT)的电流和与绝对温度互补(CTAT)的电流加权和技术,同时采用放大器工作在亚阈值区技术及运放失调补偿技术,基于0.4μm的CMOS工艺设计了一个低温度系数、低功耗的基准电压电路。通过电源电压、工作温度及工艺角对基准电压影响的仿真,结果表明该带隙基准源典型的温度系数为2×10^-6/℃,功耗为5.472μW,基准电压为1.32V,电源抑制比为83.5dB,实现了低温度系数、低功耗特性,且电路工作稳定。The temperature coefficient and power consumption of the bandgap reference voltage source are analyzed.The current proportional to absolute temperature(PTAT)and the current-weighted summation technique with absolute temperature complementation(CTAT)are used,while the amplifier is operated at the subthreshold zone technology and op amp offset compensation technology,based on 0.4μm CMOS process technology,a low temperature coefficient low power reference voltage circuit is designed.The simulation results of the influence of power supply voltage,operating temperature and process angle on the reference voltage show that the typical temperature coefficient of the bandgap reference source is 2×10^-6/℃,the power consumption is 5.472μW,the reference voltage is 1.32 V,and the power supply rejection ratio is 83.5 dB,which realize low temperature coefficient and low power consumption,and the circuit works stably.

关 键 词：带隙基准电压 PTAT电流 CTAT电流 温度系数 

分 类 号：TN402[电子电信—微电子学与固体电子学]