数字递变异变赝衬底上2.6μm In0.83Ga0.17As/InP光电探测器的性能改进（英文）  

Improved performances of 2.6 μm In0.83Ga0.17As/InP photodetectors on digitally-graded metamorphic pseudo-substrates

作　　者：师艳辉 杨楠楠 马英杰[1,3,4] 顾溢 陈星佑[1] 龚谦 张永刚[1,3,4] SHI Yan-Hui;YANG Nan-Nan;MA Ying-Jie;GU Yi;CHEN Xing-You;GONG Qian;ZHANG Yong-Gang(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;University of Chinese Academy of Sciences,Beijing 100049,China;State Key Laboratory of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]中国科学院大学,北京100049 [3]中国科学院上海技术物理研究所传感技术联合国家重点实验室,上海200083 [4]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083

出　　处：《红外与毫米波学报》2019年第3期275-280,共6页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Key Research and Development Program of China(2017YFB0405300,2016YFB0402400);National Natural Science Foundation of China(61605232,61675225,61775228);the Shanghai Rising-Star Program(17QA1404900)

摘　　要：研究了In0. 83Al0. 17As /In0. 52Al0. 48As 数字递变异变缓冲层结构( DGMB)的总周期数对2. 6 μm 延伸波长In0. 83Ga0. 17As 光电二极管性能的影响.实验表明,在保持总缓冲层厚度不变的情况下,通过将在InP 衬底上生长的In0. 83Al0. 17As /In0. 52Al0. 48As DGMB 结构的总周期数从19 增加到38,其上所生长的In0. 83 Ga0. 17 As /In0. 83Al0. 17As 光电二极管材料层的晶体质量得到了显著改善.对于在总周期数为38 的DGMB 上外延的In0. 83Ga0. 17As 光电二极管,观察到其应变弛豫度增加到99. 8%,表面粗糙度降低,光致发光强度和光响应度均增强,同时暗电流水平被显著抑制.这些结果表明,随着总周期数目的增加,DGMB 可以更有效地抑制穿透位错的传递并降低残余缺陷密度.Impacts of the total period number for the In0. 83 Al0. 17 As /In0. 52 Al0. 48 As digitally-graded metamorphic buffer ( DGMB) on the performances of 2. 6 μm In0. 83Ga0. 17As photodiodes ( PDs) have been investigated. An increase of the total period number from 19 to 38 for the In0. 83Al0. 17As /In0. 52Al0. 48As DGMB with the same thickness has shown improved crystal qualities for the In0. 83Ga0. 17As /In0. 83Al0. 17As photodiode layers grown on such pseudosubstrates. An increased strain relaxation degree up to 99. 8%,a reduced surface roughness,enhanced photoluminescence intensities as well as photo responsivities,and suppressed dark currents are observed simultaneously for the In0. 83Ga0. 17As photodiode on the DGMB with a period number of 38. These results suggest that with more periods, DGMB can restrain the transmission of the threading dislocations more efficiently and reduce the residual defect density.

关 键 词：数字递变 异变 缓冲 INGAAS 光电探测器 

分 类 号：TN215[电子电信—物理电子学]