两款V波段硅基滤波器的设计与分析  

Design and Analysis of Two Silicon-Based Filters at V-Band

作　　者：周泽伦 

机构地区：[1]西安电子工程研究所

出　　处：《大众科技》2019年第4期62-64,共3页Popular Science & Technology

摘　　要：文章介绍了两款采用硅基工艺和SIW结构的带通滤波器。滤波器结构采用高阻硅作为衬底材料,通过金属通孔阵列形成微波滤波器谐振腔,输入输出采用共面波导-微带转换结构,易于外部集成,通过探针台可以进行快速测试;同时该滤波器尺寸较小而且易于加工。将第一款滤波器的模型在HFSS上进行了仿真分析得到结果,第二款滤波器在第一款的基础上增加阶数以提升滤波器的带外抑制性能。仿真数据说明,不同尺寸的两款滤波器的通带频率均是55GHz^60GHz,插入损耗分别是1.7dB和2.1dB,驻波比低于1.1,在50GHz带外抑制分别达到31dB和62dB。Two silicon-based band-pass filters using the structure of SIW cavities is proposed and designed. A high-resistance- silicon is used as the substrate inside the filter;the resonant cavities of the microwave filter are formed of metal vias array;the transforming structure of the co-plane waveguide and the microstrip line is used for the input/output structure which is easy for fast testing on the probe test station and integrating with the outside circuit. In addition, the filter is small and easy to fabricate. The model of the first filter was simulated by analysis software HFSS. The second filter is based on the structure of the first one and adds the order of filters to increase the rejection of the stopband. As a result of simulation, the band-pass frequency is from 55GHz to 60GHz. Besides, the insertion loss is 1.7dB and 2.1dB, the VSWR is better than 1.1, and the rejection at 50GHz is 31dB and 62dB.

关 键 词：V波段 滤波器 SIW 高阻硅 

分 类 号：TN713[电子电信—电路与系统]