InP/InGaAs探测器氮化硅钝化膜的ICPCVD生长技术  

Study on the ICPCVD Technology of Silicon Nitride Passivation Films for InP/InGaAs Detectors

作　　者：龚燕妮 杨文运[2] 杨绍培 范明国 褚祝军[1,2] GONG Yanni;YANG Wenyun;YANG Shaopei;FAN Mingguo;CHU Zhujun(North Night Vision Technology Co. Ltd, Kunming 650223, China;North Night Vision Science & Technology Group Corp., Kunming 650223, China)

机构地区：[1]北方夜视技术股份有限公司,云南昆明650223 [2]北方夜视科技集团有限公司,云南昆明650223

出　　处：《红外技术》2019年第6期511-514,共4页Infrared Technology

基　　金：云南省基础研究重大项目(2016FC002)

摘　　要：采用ICPCVD工艺对InP/InGaAs探测器进行SiNx薄膜钝化,讨论了不同气体比例、射频功率和反应压力对SiNx薄膜应力和致密性的影响。初步得到了低应力、良好致密性的SiNx薄膜沉积工艺。利用此工艺制作的InP/InGaAs探测器在偏压为-10mV的暗电流比PECVD工艺制作的器件降低了一个数量级,为4.4×10^-8A。InP/InGaAs detectors were passivated by inductively-coupled plasma chemical vapor deposition (ICPCVD) process. The effects of different gas ratios, radio frequency power, and reaction pressure on the stress and densification of SiNx were investigated, and SiNx thin films with good characteristics were deposited. The dark current of InP/InGaAs detectors by the passivation process is one order of magnitude lower than that of detectors by PECVD process at the bias voltage of 10 mV, which is 4.4×10^-8 A.

关 键 词：InP/InGaAs探测器 ICPCVD 氮化硅 

分 类 号：TN363[电子电信—物理电子学]