单晶硅晶片化学机械抛光基本特性研究  

Observation of Surface Integrity in Ultrasonic Assisted Internal Grinding of SiC Ceramics

作　　者：侯保江[1] 安亚青 水涌涛[1] 孙向春[1] HOU Baojiang;AN Yaqing;SHUI Yongtao;SUN Xiangchun(Beijing Institute of Space Long March Vehicle, Beijing 100076, China;China Academy of Launch Vehicle Technology,Beijing 100076, China)

机构地区：[1]北京航天长征飞行器研究所,北京100076 [2]中国运载火箭技术研究院,北京100076

出　　处：《兵器装备工程学报》2019年第6期163-166,205,共5页Journal of Ordnance Equipment Engineering

摘　　要：实验中利用商业抛光机对单晶硅晶片进行化学机械抛光;实验结果显示:表面粗糙度随着抛光垫和抛光头的转速以及抛光载荷的增加而减小;抛光载荷是影响总厚度变化的主要因素,晶片的总厚度变化会随着抛光载荷的增加而相应地减少;材料去除率随着抛光垫转速,抛光头转速,以及抛光载荷的增加而增加,抛光载荷的变化对材料去除率的影响最明显。In this experiment,single crystal silicon wafer was subjected to chemical mechanical polishing using a commercial polishing machine.The experimental results show that:(1)the surface roughness(Ra)decreases with the rotation speed of the polishing pad and the polishing head and the polishing load increases;(2)the polishing load is the main factors affecting the total thickness variation(TTV),and the total thickness variation of the wafer will decrease correspondingly as the polishing load increases;(3)The material removal rate(MRR)increases as the polishing pad rotation speed,the polishing head rotation speed,and the polishing load increase.The change in polishing load has the most significant effect on the material removal rate.

关 键 词：砷化镓 化学机械抛光 抛光特性 表面粗糙度 

分 类 号：F407.41[经济管理—产业经济]