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作 者:王崇杰 祝柏林[1] 赵绚 马俊敏 吴隽[1] 甘章华[1] 刘静[1] WANG Chongjie;ZHU Bailin;ZHAO Xuan;MA Junmin;WU Jun;GAN Zhanghua;LIU Jing(The State Key Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,China)
机构地区:[1]武汉科技大学省部共建耐火材料与冶金国家重点实验室
出 处:《硅酸盐学报》2019年第7期900-907,共8页Journal of The Chinese Ceramic Society
基 金:材料成形与模具技术国家重点实验室开放基金课题(P2014-06)
摘 要:以射频磁控溅射方法在两种沉积速率下(0.065和0.750 nm/s)制备单层Ag膜,研究了沉积速率对Ag膜结构的影响。以同样的两种速率制备Ag层,并变化Ag层厚度,研究了制备的SnO2/Ag/SnO2 3层膜的透明导电性能。结果发现:高速沉积的Ag膜晶粒粗大、表面粗糙度低,也即其结晶性更好且易于连续成膜,该结果很好地解释了当Ag层膜厚较薄时(<6 nm),高速沉积Ag层制备的SnO2/Ag/SnO2 3层膜表现出更高的品质因子。当Ag层膜厚较厚时(>6 nm),低速沉积Ag层制备的3层膜的品质因子更高,并且在Ag层厚度为8 nm时获得的最高的品质因子(4.73×10-2/Ω),大于Ag层高速沉积且膜厚为6 nm时,获得的最高品质因子(3.45×10-2/Ω),这可能与Ag层较厚时,粗糙表面的Ag层表现出更高的透光性有关。Ag films were prepared at two deposition rates (i.e., 0.065 and 0.750 nm/s), and the effect of deposition rate on the structure of Ag films was investigated. SnO2/Ag/SnO2 tri-layer films with Ag layer deposited at two deposition rates were prepared, and their transparent conductive properties with respect to the effect of Ag layer thickness were investigated. The results indicate that the Ag film deposited at a higher deposition rate has a larger crystallite size and a lower surface roughness. That is, the films have higher crystallinity, and the continuous film can be formed more easily. SnO2/Ag/SnO2 tri-layer films with Ag layer deposited at a higher deposition rate exhibit a higher figure of merit (FOM) at a thinner thickness of Ag layer (<6 nm). At a thicker thickness of Ag layer (>6 nm), tri-layer films with Ag layer deposited at a lower deposition rate exhibit a higher FOM, and the maximum FOM (4.73×10^-2/Ω) obtained at Ag layer thickness of 8 nm is greater than that of tri-layer films with Ag layer deposited at higher deposition rate (i.e., 3.45×10^-2/Ω). This unexpected result may be related to the fact that Ag layer with a rough surface has a higher transmittance at a greater Ag layer thickness.
关 键 词:氧化物/金属/氧化物3层膜 透明导电性 沉积速率 渗透阈值 品质因子
分 类 号:TN304[电子电信—物理电子学]
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