HWCVD法掺氧氢化非晶硅(a-SiO_x:H)钝化n-Cz-Si研究  

Passivation of Oxygen Doped Hydrogenated Amorphous Silicon Coatings for Fabrication of HIT Solar Cells

作　　者：何玉平[1,2] 袁贤 刘宇 刘宁 黄海宾[2] He Yuping;Yuan Xian;Liu Yu;Liu Ning;Huang Haibin(School of Science,Nanchang Institute of Technology,Nanchang 330099,China;Institute of Photovoltaics,Nanchang University,Nanchang 330031,China)

机构地区：[1]南昌工程学院理学院,南昌330099 [2]南昌大学光伏研究院,南昌330031

出　　处：《真空科学与技术学报》2019年第6期519-523,共5页Chinese Journal of Vacuum Science and Technology

基　　金：江西省教育厅科学技术研究项目(GJJ171010);江西省青年科学基金项目(20171BAB216014)

摘　　要：HIT电池高效率核心技术之一为本征非晶硅薄膜钝化硅片。本文采用热丝化学气相沉积(HWCVD)法制备a-SiOx:H,采用SintonWCT-120少子寿命测试仪、光谱型椭偏仪及傅里叶红外光谱测试仪分析样品性能,以期获得高质量a-SiOx:H的工艺参数并分析微观机理。结果表明:①随热丝电流增加,沉积a-SiO:H膜的样品少子寿命先增加后减小,22.5 A时钝化效果最好,少子寿命高达2530μs,表面复合速率降至3.6 cm/s;②本实验结果中,a-SiOx:H钝化效果明显优于a-Si:H,少子寿命最高分别为2530和547μs;③a-SiOx:H薄膜中SiH、SiH2相对含量与薄膜钝化性能无直接关联。The oxygen doped hydrogenated amorphous silicon(a-SiOx∶H)thin films,for fabrication of heterojunction with intrinsic thin layer(HIT)solar cells,were synthesized by hot filament chemical vapor deposition(HWCVD)on substrate of n-type Si(100).The influence of the filament current on properties of n-Si(100)substrate was investigated by minority carrier life-time measurement and with ellipsometry and Fourier transform infrared spectroscopy.The results show that depending on the filament current,the passivation of a-SiOx:H was more effective than that of a-Si:H.For example,as the current increased,the minority carrier lifetime of n-Si(100)changed in an increase-decrease mode;passivated at an optimized current of 22.5 A,the minority carrier lifetime increased to 2530μs and the surface recombination rate decreased to 3.6 cm/s.Moreover,the passivation did not directly relate to the relative contents of SiH and SiH2 in a-SiOx∶H layer.

关 键 词：a-SiOx:H 热丝化学气相沉积 少子寿命 SiH键 SiH2键 

分 类 号：O484[理学—固体物理]