Al/SnO2/FTO结构双极型电阻开关的制备及其性质研究  

Preparation and Characterization of Al/SnO2/FTO Bipolar Resistive Switching

作　　者：赵飞 周磊 王鑫 Zhao Fei;Zhou Lei;Wang Xin(Avic Aircraft Co.,Ltd,Xi’an,710089;National Laboratory for Optoelectronics in preparation,Wuhan,430074)

机构地区：[1]中航飞机股份有限公司,西安710089 [2]武汉光电国家实验室(筹),武汉430074

出　　处：《塑料助剂》2019年第3期33-37,共5页Plastics Additives

摘　　要：通过溶胶凝胶的方法,在FTO衬底上制备得到SnO2薄膜,并对SnO2薄膜的晶体结构以及荧光光谱(PL)进行了研究。XRD结果显示SnO2薄膜为多晶结构,荧光光谱结果表明SnO2薄膜存在氧空位以及氧填隙等缺陷。通过直流磁控溅射在SnO2薄膜上面溅射Al作为顶电极,并对Al/SnO2/FTO结构进行了电阻开关性质研究,测试结果表明器件具有双极型电阻开关性质和良好的阻态保持特性。对器件的电流-电压曲线特征进行了研究,认为SnO2薄膜内氧离子(氧空位)在电场作用下发生迁移,在Al/SnO2界面发生氧化还原反应是引起Al/SnO2/FTO电阻状态改变的原因。A SnO2 thin film was first prepared on the FTO substrate through the sol-gel method,and its crystal structure and the photoluminescence(PL)of the film were thus studied.The XRD data showed that the SnO2 film was polycrystalline,and the PL spectrum indicated that there existed oxygen vacancies and the interstitial oxygen defect in the SnO2 film.The Al top electrode was gained by DC magnetron sputtering on the SnO2 film,and the switching properties of the Al/SnO2/FTO memristor were also tested to discover that the device has a bipolar resistive switching property and good state retention characteristic.Finally,from the analysis on the characteristic of current-voltage curves,we demonstrated that the oxygen ions(oxygen vacancies)migrated under appropriate bias voltage,and the redox reaction occurred in the Al/SnO2 interface was the main reason for the resistive state change.

关 键 词：SNO2薄膜 电阻开关 双极型 溶胶凝胶 

分 类 号：TB33[一般工业技术—材料科学与工程]