高功率微波下GaAs PIN限幅器的损伤机理分析  

Mechanism Analysis of GaAs PIN Limiter Damaged by High Power Microwave Injection

作　　者：高金环[1,2] 黄杰[1,2] 席善斌[1,2] GAO Jin-huan;HUANG Jie;XI Shan-bin(The 13th Research Institute,CECT,Shijiazhuang,050051;National semiconductor Device Supervision and Inspection Center, Shijiazhuang 050051)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]国家半导体器件质量监督检验中心,石家庄050051

出　　处：《环境技术》2019年第3期6-8,共3页Environmental Technology

摘　　要：GaAs PIN限幅器是置于通信接收前端抗电磁扰动的重要部件。本文对经受高功率微波后GaAs PIN限幅器损伤形貌的观察,结合其损伤机理分析,揭示了PIN二极管易于损伤的位置以及造成界面损伤的机理,对于GaAs PIN限幅器设计和工艺改进具有一定的指导意义。As an important part, the GaAs PIN limiter which can resist electromagnetism intrusion is placed in the front of communication receive channel. In this article, the damaged morphology of the device is obtained by a variety of failure analysis after high power microwave injection. Based on the failure mechanism analysis, the failure mechanism of interface and location where the damage happens are revealed, which sheds light on the design and improvement of GaAs PIN limiter.

关 键 词：限幅器 PIN界面 高功率微波 损伤形貌 失效机理 

分 类 号：TN312.4[电子电信—物理电子学]