GaAs/AlGaAs量子阱红外探测器的设计  

Design of GaAs/AlGaAs Quantum Well Infrared Photodetector

作　　者：刘红梅[1,2] 董丽娟[1,2] 吕良宇 LIU Hong-mei;DONG Li-juan;LV Liang-yu(School of Physics and Electronics Science, Shanxi Datong University, Datong Shanxi, 037009;Institute of Solid State Physics, Shanxi Datong University, Datong Shanxi, 037009)

机构地区：[1]山西大同大学物理与电子科学学院,山西大同037009 [2]山西大同大学固体物理研究所,山西大同037009

出　　处：《山西大同大学学报（自然科学版）》2019年第3期14-16,52,共4页Journal of Shanxi Datong University(Natural Science Edition)

基　　金：山西省应用基础研究项目[201701D221096]

摘　　要：随着探测领域的不断扩大和深入,人们对高性能量子阱红外探测器的需求也越来越迫切。为了解决这一问题,从量子阱红外探测器性能对探测器材料、结构的依赖作用入手,利用电磁仿真方法设计了5个周期的GaAs/AlGaAs量子阱红外探测器。该探测器采用纵向层状三明治结构,顶部和底部由n型掺杂的GaAs接触层构成,中间是5个周期的GaAs/AlGaAs量子阱复合层。结果表明,该量子阱探测器的最优探测波段为978 nm,而且在近红外波段该红外探测器的反射峰值随着量子阱阱宽的增大向低频方向移动,其最优阱宽为5 nm,为获得高性能量子阱红外探测器提供理论支持。With the expanding and the deepening of the detection field, the necessity of the high performance quantum well infra. red photodetector will become more and more urgent. To solve this problem, by starting with the dependence of the performance of the quantum well infrared photodetector on the materials and the structure, the five-periods GaAs/AlGaAs is simulated and designed and studied.The photodetector adopts vertical layer and sandwich structure, its top and bottom are made up of n-GaAs contact layer, its middle is 5 periods GaAs/AlGaAs quantum well composite layers. Experimental results show that the optimal wave band of the detec. tion is 978nm, and the reflection peak of the photodetector moves in the direction of low frequency with the increase of the width of quantum wells, and the optimal well width of the photodetector is given as 5nm,which can provide with the theoretical supports to ob. tain the high performance quantum well infrared photodetector.

关 键 词：量子阱红外探测器 GAAS/ALGAAS 阱宽 

分 类 号：TN215[电子电信—物理电子学]