退火温度对ZnO薄膜晶体管电学性能的影响（英文）  

Effect of annealing temperature on the electrical properties of ZnO thin-film transistors

作　　者：覃金牛 温喜章 冯武昌[1] 许望颖[1] 朱德亮[1] 曹培江[1] 柳文军[1] 韩舜[1] 刘新科[1] 方明 曾玉祥[1] 吕有明[1] QIN Jinniu;WEN Xizhang;FENG Wuchang;XU Wangying;ZHU Deliang;CAO Peijiang;LIU Wenjun;HAN Shun;LIU Xinke;FANG Ming;ZENG Yuxiang;LV Youming(Guangdong Research Center for Interfacial Engineering of Functional Materials,Shenzhen Key Laboratory ofSpecial Functional Materials,College of Materials Science and Engineering,Shenzhen University,Shenzhen 518060,Guangdong Province,P.R.China)

机构地区：[1]广东省功能材料界面工程研究中心深圳市特种功能材料实验室深圳大学材料学院

出　　处：《深圳大学学报（理工版）》2019年第4期375-381,共7页Journal of Shenzhen University(Science and Engineering)

基　　金：National Natural Science Foundation of China(61704111,51872187,11774241,51371120);Natural Science Foundation of Guangdong Province(2017A030310524);Science and Technology Foundation of Shenzhen(JCYJ20170818143417082,JCYJ20170817100611468)~~

摘　　要：为研究退火温度(从室温到500℃)对ZnO薄膜和薄膜晶体管(thin-film transistor,TFT)电性能的影响,使用X射线衍射、扫描电子显微镜、原子力显微镜、X射线光电子能谱和光致发光等技术对ZnO-TFT进行表征。实验结果表明,具有400℃退火温度的ZnO-TFT表现出最佳性能,迁移率为2.7cm^2/Vs,阈值电压为4.6V,开/关电流比为5×10^5,亚阈值摆幅为0.98V/Dec。电性能的改善可归因于载流子浓度的降低,ZnO膜结晶的增强,以及氧化物半导体层和绝缘层之间界面的改善。In order to study the influence of annealing temperature (from room temperature to 500℃) on the electrical properties of ZnO thin film and thin-film transistors (TFTs), we carefully characterize the ZnO-TFT by using a wide range of techniques including X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL). The results show that the ZnO-TFTs annealed at 400℃ have the best performance with mobility of 2.7cm^2/Vs, threshold voltage of 4.6V, on/off current ratio of 5×10^5 and subthreshold swing of 0.98V/Dec. The improvement of the electrical performance could be attributed to the decrease of carrier concentration, the enhancement of crystallization in ZnO films, and the improvement of interface between the oxide semiconductor layer and the insulation layer.

关 键 词：薄膜材料 ZNO 薄膜晶体管 退火温度 迁移率 界面 

分 类 号：TP322[自动化与计算机技术—计算机系统结构]