空间高能粒子与器件布线层核反应后次级粒子LET分布研究  

Simulation of the Interaction’s Effects on Single Event Effects between High-Energy Particles and Interconnect Overlayers within Semiconductor Devices

作　　者：杨涛 邵志杰 蔡明辉 贾鑫禹 韩建伟 YANG Tao;SHAO Zhijie;CAI Minghui;JIA Xinyu;HAN Jianwei(National Space Science Center,Chinese Academy of Sciences,Beijing 100190,China;Shanghai Institute of Spaceflight Control Technology, Shanghai 201109,China;University of Chinese Academy of Sciences,Beijing 100049,China;Beijing University of Technology,Beijing 100022,China)

机构地区：[1]中国科学院国家空间科学中心,北京100190 [2]上海航天控制技术研究所,上海201109 [3]中国科学院大学,北京100049 [4]北京工业大学,北京100022

出　　处：《深空探测学报》2019年第2期173-178,共6页Journal Of Deep Space Exploration

基　　金：中国科学院战略性先导科技专项A类资助项目(XDA17010301);北京市科技重大专项资助项目(Z181100002918004);载人航天领域预先研究课题资助项目(Y79001AF00)

摘　　要：空间高能质子和重离子是导致元器件发生单粒子效应的根本原因,为准确评估元器件在轨遭遇的单粒子效应风险,必须清楚高能质子、重离子与器件材料发生核反应的物理过程及生成的次级重离子LET(Line Energy Transfer)分布规律。针对典型CMOS工艺器件模拟计算了不同能量质子和氦核粒子在器件灵敏单元内产生的反冲核、平均能量及线性能量转移值,并分析了半导体器件金属布线层中重金属对次级重离子LET分布的影响规律。计算结果表明:高能粒子与器件相互作用后产生大量次级重离子,且高能质子作用后产生的次级粒子的LET值主要分布为0~25MeV·cm^2/mg;高能氦核粒子作用后产生的次级粒子的LET值主要分布为0~35 MeV·cm^2/mg;有重金属钨(W)存在时能提高次级粒子的LET值,增加了半导体器件发生单粒子效应的概率,该研究结果可为元器件单粒子效应风险分析、航天器抗单粒子效应指标确定提供重要依据。By simplifying the sensitive volume of semiconductor devices,a typical Geometric Model of CMOS device is has been built. The recoiled nuclei,average energy and LET induced by Cosmic High Energy Protons and High Energy alpha particles in the sensitive units are simulated. The effects of heavy metals within the devices’ metal interconnect overlayers on the LET of Single Event Effect were studied,and the result shows that effects of high energy particles on the tungsten in the metal wiring layers can increase LET of secondary particles,and thus heighten the incidence of single event upset.

关 键 词：高能粒子 CMOS工艺器件 LET值 单粒子效应 GEANT4 

分 类 号：O571[理学—粒子物理与原子核物理]