基于GaN HEMT的S波段大功率内匹配功放管设计  

Design of S-Band High Power Internally Matched Power Amplifier Based on the GaN HEMT

作　　者：陈晓青[1] 戈硕 时晓航 CHEN Xiaoqing;GE Shuo;SHI Xiaohang(Nanjing Electronic Device Institute,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所

出　　处：《电子与封装》2019年第7期45-48,共4页Electronics & Packaging

摘　　要：采用GaN HEMT功率芯片研制了一款应用在S波段的宽频段、大功率、高效率的功率放大器。通过load-pull技术牵引得出GaN管芯在此频段的输入阻抗和输出阻抗。在设计过程中,采用多节阻抗匹配变换器实现了宽带的功率分配和合成。此款内匹配功率管最终实现了如下性能指标:工作脉宽100μs,在400MHz的工作带宽下脉冲输出功率大于800W,漏极效率大于60%。A S-band power amplifier with high power, high efficiency, broadband based on the GaN HEMT is designed. The input and output impedances of the device are attained with load pull and modeling technique. In the design process, the broadband power divider and combiner circuit is realized by using binomial impedance transformer. The amplifier finally achieves the goal: the output power is greater than 800 W at 400 MHz bandwidth and the power added efficiency is higher than 60% in 100 μs pulse-width .

关 键 词：大功率 内匹配 功率放大器 S波段 

分 类 号：TN722.7[电子电信—电路与系统]