全控型器件串联IGBT在吸收电路中均压效果分析  

Analysis of Voltage Equalization Effect of Fully Controlled DeviceSeries IGBT in Absorption Circuit

作　　者：薛博文[1] Xue Bowen(Xi′an Railway Vocational and Technical Institute, Xi′an, Shaanxi 710026, China)

机构地区：[1]西安铁路职业技术学院,陕西西安710026

出　　处：《西安铁路职业技术学院学报》2019年第2期8-12,共5页Journal of Xi’an Railway Vocational & Technical Institute

摘　　要：针对IGBT串联阀运行过程分压不均衡,从IGBT器件原理上分析了影响串联分压不均衡的因素。采用RCD无源吸收回路减缓关断过程中dv/dt以抑制过电压,从均压效果和IGBT关断时间两方面对均压电容取值进行了分析,并对实验波形从理论上进行了分析。实验结果表明在门极驱动信号同步情况下,RCD吸收回路可有效抑制关断过程过电压。In view of the unbalanced pressure distribution during the operation of IGBT series valves,the factors affecting unbalanced pressure distribution in series are analyzed from the principle of IGBT devices.The dv/dt of RCD passive absorption circuit is used to reduce the over-voltage during switching-off.The voltage-equalizing capacitance is analyzed from two aspects of voltage-equalizing effect and IGBT switching-off time,and the experimental waveform is analyzed theoretically.The experimental results show that the RCD absorption circuit can effectively suppress the switching overvoltage when the gate driving signal is synchronized.

关 键 词：IGBT串联 均压 RCD吸收 

分 类 号：TM86[电气工程—高电压与绝缘技术]