铜互连微结构中无籽晶RuMoC扩散阻挡层的稳定性（英文）  

Characterization of Thermal Stability of RuMoC Films as Seedless Cu Diffusion Barriers in Damascene Structures for Cu Interconnects

作　　者：邹建雄[1] 林黎蔚[1] 焦国华[2] 鲁远甫[2] 刘波[1] 徐可为[3] Zou Jianxiong;Lin Liwei;Jiao Guohua;Lu Yuanfu;Liu Bo;Xu Kewei(Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064,China;Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences, Shenzhen 518055,China;State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049,China)

机构地区：[1]四川大学教育部辐射物理及技术重点实验室,四川成都610064 [2]中国科学院深圳先进技术研究院,广东深圳518055 [3]西安交通大学金属材料强度国家重点实验室,陕西西安710049

出　　处：《稀有金属材料与工程》2019年第6期1809-1813,共5页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China(11605116);Shenzhen Industry Development Fund Project(JCY20150925163313898,JCYJ20140417113130693);Shenzhen Engineering Laboratory Project(2012-1127)

摘　　要：采用磁控共溅射Ru和MoC靶,通过调节掺入MoC的含量获得非晶态RuM oC薄膜,研究了非晶RuM oC薄膜的热稳定性。HRTEM和XRD结果表明,在500℃下RuM oC薄膜依旧保持非晶结构;XPS分析结果表明,在该温度下,Ru-C键依旧保持完好,是RuM oC薄膜良好热稳定的关键。此外,研究了非晶RuM oC薄膜在大马士革铜互连线微结构中的热稳定性。HRTEM结果表明,RuM oC薄膜表面可直接电镀铜,TEM原位EDS结果表明,非晶RuM oC薄膜在500℃下依旧成功阻挡了Cu原子扩散。The objective of this study is to test the feasibility of RuMoC films for its application in seedless Cu diffusion barriers of damascene structure. The compatibility with integral circuit(IC) fabrication and thermal stability of RuMoC barriers were investigated. The RuMoC barriers are amorphous at temperatures up to 500 °C, showing great thermal stability. This is because the Ru-C bonds are well preserved at those temperatures, as revealed by XPS results, which hinder the Ru from crystallizing. A Cu plug of good quality was successfully electroplated on RuMoC barriers and filled the trench without seed layer, and the barrier effectively block the diffusion of Cu atom at temperatures up to 500 °C.

关 键 词：热稳定性 大马士革结构 非晶RuMoC薄膜 无籽晶阻挡层 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TG139.8[金属学及工艺—合金]